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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ZXTN19020DZQTA
ZXTN19020DZQTA
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Diodes Incorporated
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 - - - - - - - - 7.5 A 300 @ 100mA, 2V - - - 160MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-89-3 - NPN 200mV @ 375mA, 7.5A 20 V
2SAR542PT100
2SAR542PT100
ROHM Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 240MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 400mV @ 100mA, 5A 30 V
2SAR552PHZGT100
2SAR552PHZGT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 330MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 400mV @ 50mA, 1A 30 V
CENW92
CENW92
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Central Semiconductor Corp
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 - - - - - - - - 500 mA - - - - 50MHz - - Through Hole - 2.5 W - - TO-237 - PNP - 300 V
CMPTA06 TR PBFREE
CMPTA06 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 175°C (TJ) 350 mW - - SOT-23 - NPN 250mV @ 10mA, 100mA 80 V
2SA2126-H
2SA2126-H
On Semiconductor
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 390MHz - - Through Hole 150°C (TJ) 800 mW - - TP - PNP 520mV @ 100mA, 2A 50 V
PMBT4403/S911215
PMBT4403/S911215
NXP Semiconductors
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ZXTN19100CZTA
ZXTN19100CZTA
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Diodes Incorporated
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 - - - - - - - - 5.25 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.4 W - - SOT-89-3 - NPN 350mV @ 525mA, 5.25A 100 V
2SA1552T-TL-H
2SA1552T-TL-H
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On Semiconductor
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 - - - - - - - - 1.5 A 200 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - PNP 500mV @ 50mA, 500mA 160 V
2SCR372PHZGT100Q
2SCR372PHZGT100Q
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 5V - - - 220MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 300mV @ 50mA, 500mA 120 V
PBSS4021NZ,115
PBSS4021NZ,115
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Nexperia USA Inc.
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 - - - - - - - - 8 A 250 @ 4A, 2V - - - 95MHz - - Surface Mount 150°C (TJ) 2.6 W - - SOT-223 - NPN 170mV @ 400mA, 8A 20 V
BUL704
BUL704
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STMicroelectronics
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 - - - - - - - - 4 A 14 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220 - NPN 800mV @ 500mA, 2.5A 400 V
2SB1203S-E
2SB1203S-E
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On Semiconductor
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 - - - - - - - - 5 A 140 @ 500mA, 2V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 550mV @ 150mA, 3A 50 V
ZXTP03200BZTA
ZXTP03200BZTA
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 1A, 5V - - - 105MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-89-3 - PNP 260mV @ 400mA, 2A 200 V
TIP32ATU
TIP32ATU
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On Semiconductor
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.2V @ 375mA, 3A 60 V
2SC6017-E
2SC6017-E
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On Semiconductor
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 - - - - - - - - 10 A 200 @ 1A, 2V - - - 200MHz - - Through Hole 150°C (TJ) 950 mW - - TP - NPN 360mV @ 250mA, 5A 50 V
2SCR642PHZGT100
2SCR642PHZGT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 250MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 400mV @ 100mA, 2A 30 V
ZXTP2009ZTA
ZXTP2009ZTA
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Diodes Incorporated
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 - - - - - - - - 5.5 A 200 @ 500mA, 2V - - - 152MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.1 W - - SOT-89-3 - PNP 185mV @ 550mA, 5.5A 40 V
2SAR642PHZGT100
2SAR642PHZGT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 240MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 400mV @ 100mA, 2A 30 V
STN851-A
STN851-A
STMicroelectronics
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 - - - - - - - - 5 A 150 @ 2A, 1V - - - 130MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 500mV @ 200mA, 5A 60 V
2SC4135S-E
2SC4135S-E
On Semiconductor
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 - - - - - - - - 2 A 140 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 100mA, 1A 100 V
FJD5304DTF
FJD5304DTF
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On Semiconductor
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - - - - Surface Mount 150°C (TJ) 30 W - - TO-252AA - NPN 1.5V @ 500mA, 2.5A 400 V
2SA2039-E
2SA2039-E
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On Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 360MHz - - Through Hole 150°C (TJ) 800 mW - - TP - PNP 430mV @ 100mA, 2A 50 V
2SA1552S-TL-E
2SA1552S-TL-E
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On Semiconductor
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 - - - - - - - - 1.5 A 140 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - PNP 500mV @ 50mA, 500mA 160 V
ZXTP03200BGTA
ZXTP03200BGTA
Download Datasheet for ZXTP03200BGTA
Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 1A, 5V - - - 105MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-223-3 - PNP 275mV @ 400mA, 2A 200 V
PZTA96ST1G
PZTA96ST1G
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On Semiconductor
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 - - - - - - - - 500 mA 50 @ 10mA, 10V - - - - - - Surface Mount 150°C (TJ) 1.5 W - - SOT-223 (TO-261) - PNP 600mV @ 2mA, 20mA 450 V
STL128D
STL128D
STMicroelectronics
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 - - - - - - - - 4 A 10 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220 - NPN 500mV @ 700mA, 3.5A 400 V
CZT3019 TR PBFREE
CZT3019 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 400MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
2SC4495
2SC4495
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Sanken
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 - - - - - - - - 3 A 500 @ 500mA, 4V - - - 40MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN 500mV @ 20mA, 1A 50 V
STD1802T4-A
STD1802T4-A
STMicroelectronics
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 15 W - - DPAK - NPN 400mV @ 150mA, 3A 60 V
MUN2212T3
MUN2212T3
On Semiconductor
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2SD1796
2SD1796
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Sanken
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 - - - - - - - - 4 A 2000 @ 3A, 4V - - - 60MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN - Darlington 1.5V @ 10mA, 3A 60 V
2N6107 PBFREE
2N6107 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 7 A 30 @ 2A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220-3 - PNP 3.5V @ 3A, 7A 70 V
BULB742C-1
BULB742C-1
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STMicroelectronics
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 - - - - - - - - 4 A 25 @ 800mA, 3V - - - - - - Through Hole 150°C (TJ) 70 W - - I2PAK (TO-262) - NPN 1.5V @ 1A, 3.5A 400 V
2N6724-18 TIN/LEAD
2N6724-18 TIN/LEAD
Download Datasheet for 2N6724-18 TIN/LEAD
Central Semiconductor Corp
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 - - - - - - - - 2 A 25000 @ 200mA, 5V - - - 1GHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-237 - NPN - Darlington 1.5V @ 2mA, 1A 40 V
2STA1694
2STA1694
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STMicroelectronics
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 - - - - - - - - 8 A 70 @ 3A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 80 W - - TO-3P - PNP 1.5V @ 300mA, 3A 120 V
2SAR572D3FRATL
2SAR572D3FRATL
ROHM Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 3V - - - - - - Surface Mount 150°C (TJ) 10 W - - TO-252 - - 400mV @ 100mA, 2A 30 V
CZTA42 TR PBFREE
CZTA42 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 2mA, 20mA 300 V
CZTA92 TR PBFREE
CZTA92 TR PBFREE
Download Datasheet for CZTA92 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 2mA, 20mA 300 V
2N4923 PBFREE
2N4923 PBFREE
Download Datasheet for 2N4923 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 1 A - - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-126 - NPN - 80 V
2SCR572D3FRATL
2SCR572D3FRATL
ROHM Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - NPN 400mV @ 100mA, 2A 30 V
CJD32C TR13
CJD32C TR13
Central Semiconductor Corp
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.56 W - - DPAK - PNP 1.2V @ 375mA, 3A 100 V
MD2103DFP
MD2103DFP
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STMicroelectronics
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 - - - - - - - - 6 A 6.5 @ 3A, 5V - - - - - - Through Hole 150°C (TJ) 38 W - - TO-220FP - NPN 1.8V @ 750mA, 3A 700 V
2SC3851
2SC3851
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Sanken
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 - - - - - - - - 4 A 40 @ 1A, 4V - - - 15MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN 500mV @ 200mA, 2A 60 V
2SD2016
2SD2016
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Sanken
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 - - - - - - - - 3 A 1000 @ 1A, 4V - - - 90MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN - Darlington 1.5V @ 1.5mA, 1A 200 V
2N6290 PBFREE
2N6290 PBFREE
Download Datasheet for 2N6290 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 7 A 30 @ 2.5A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220-3 - NPN 3.5V @ 3A, 7A 50 V
STD901T
STD901T
STMicroelectronics
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 - - - - - - - - 4 A 1800 @ 2A, 2V - - - - - - Surface Mount 150°C (TJ) 35 W - - DPAK - NPN - Darlington 2V @ 20mA, 2A 350 V
2SCR586JGTLL
2SCR586JGTLL
ROHM Semiconductor
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 - - - - - - - - 5 A 120 @ 500mA, 3V - - - 200MHz - - Surface Mount 150°C (TJ) 40 W - - TO-263AB - NPN 300mV @ 100mA, 2A 80 V
2SC4546
2SC4546
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Sanken
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 - - - - - - - - 7 A 10 @ 3A, 4V - - - 10MHz - - Through Hole 150°C (TJ) 30 W - - TO-220F - NPN 700mV @ 600mA, 3A 400 V
2SC4511
2SC4511
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Sanken
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 - - - - - - - - 6 A 50 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 30 W - - TO-220F - NPN 500mV @ 200mA, 2A 80 V
Showing 20451-20500 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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