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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC 807-25 E6327
BC 807-25 E6327
Download Datasheet for BC 807-25 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 700mV @ 50mA, 500mA 45 V
BC 807-40 E6327
BC 807-40 E6327
Download Datasheet for BC 807-40 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 700mV @ 50mA, 500mA 45 V
BC 817-16 E6327
BC 817-16 E6327
Download Datasheet for BC 817-16 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC 817-25 E6327
BC 817-25 E6327
Download Datasheet for BC 817-25 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC 817-40 E6327
BC 817-40 E6327
Download Datasheet for BC 817-40 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC 846B E6327
BC 846B E6327
Download Datasheet for BC 846B E6327
Infineon Technologies
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 600mV @ 5mA, 100mA 65 V
BC 856B E6327
BC 856B E6327
Download Datasheet for BC 856B E6327
Infineon Technologies
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 65 V
BCP 54-16 E6327
BCP 54-16 E6327
Download Datasheet for BCP 54-16 E6327
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 45 V
89100-06TXV
89100-06TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
ST631K
ST631K
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STMicroelectronics
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 - - - - - - - - 1 A 120 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 12.5 W - - SOT-32-3 - PNP 500mV @ 50mA, 500mA 120 V
ST901TFP
ST901TFP
STMicroelectronics
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 - - - - - - - - 4 A 1500 @ 2A, 2V - - - - - - Through Hole - 80 W - - TO-220FP - NPN - Darlington 2V @ 1A, 5A 400 V
STL72
STL72
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 80mA, 400mA 400 V
STN1802
STN1802
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STMicroelectronics
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 400mV @ 150mA, 3A 60 V
STSA851-AP
STSA851-AP
STMicroelectronics
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 - - - - - - - - 5 A 150 @ 2A, 1V - - - 130MHz - - Through Hole 150°C (TJ) 1.1 W - - TO-92AP - NPN 450mV @ 200mA, 5A 60 V
STT13005
STT13005
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STMicroelectronics
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 - - - - - - - - 2 A 10 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 45 W - - SOT-32-3 - NPN 1.5V @ 400mA, 1.6A 400 V
STX117-AP
STX117-AP
STMicroelectronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 1.2 W - - TO-92AP - PNP 2.5V @ 8mA, 2A 100 V
STX715-AP
STX715-AP
STMicroelectronics
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 - - - - - - - - 1.5 A 40 @ 1A, 2V - - - 50MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92AP - NPN 500mV @ 100mA, 1A 80 V
STX826
STX826
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92-3 - PNP 1.1V @ 150mA, 3A 30 V
2SD1585-AZ
2SD1585-AZ
Renesas
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DCX53-13
DCX53-13
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 80 V
DCX53-16-13
DCX53-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 80 V
DCX68-13
DCX68-13
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Diodes Incorporated
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 330MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 100mA, 1A 20 V
DCX69-16-13
DCX69-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 500mA, 1V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 100mA, 1A 20 V
2DB1132Q-13
2DB1132Q-13
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Diodes Incorporated
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 - - - - - - - - 1 A 120 @ 100mA, 3V - - - 190MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 32 V
2DB1188P-13
2DB1188P-13
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Diodes Incorporated
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 - - - - - - - - 2 A 82 @ 500mA, 3V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 800mV @ 200mA, 2A 32 V
DXT3150-13
DXT3150-13
Diodes Incorporated
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 - - - - - - - - 5 A 250 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 200mA, 4A 25 V
2DD1766Q-13
2DD1766Q-13
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Diodes Incorporated
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 - - - - - - - - 2 A 120 @ 500mA, 3V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 800mV @ 200mA, 2A 32 V
NSS12600CF8T1G
NSS12600CF8T1G
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On Semiconductor
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 - - - - - - - - 5 A 250 @ 1A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 830 mW - - ChipFET™ - PNP 170mV @ 400mA, 4A 12 V
NSS20600CF8T1G
NSS20600CF8T1G
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On Semiconductor
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 - - - - - - - - 6 A 220 @ 1A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 830 mW - - ChipFET™ - PNP 200mV @ 400mA, 4A 20 V
2SD0968ARL
2SD0968ARL
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - NPN 600mV @ 50mA, 500mA 120 V
2STC5242
2STC5242
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STMicroelectronics
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 - - - - - - - - 15 A 80 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 150 W - - TO-3P - NPN 3V @ 800mA, 8A 230 V
2STW1693
2STW1693
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STMicroelectronics
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 - - - - - - - - 6 A 50 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 60 W - - TO-247-3 - PNP 1.5V @ 600mA, 6A 80 V
BC213_J35Z
BC213_J35Z
On Semiconductor
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 - - - - - - - - 500 mA 80 @ 2mA, 5V - - - 200MHz - - Through Hole - 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
FJP5200OTU
FJP5200OTU
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On Semiconductor
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 80 W - - TO-220-3 - NPN 3V @ 800mA, 8A 250 V
MMBT3904T
MMBT3904T
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 250 mW - - SC-89-3 - NPN 300mV @ 5mA, 50mA 40 V
2SC3503DSTU
2SC3503DSTU
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On Semiconductor
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 - - - - - - - - 100 mA 60 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - NPN 600mV @ 2mA, 20mA 300 V
2SC3503ESTU
2SC3503ESTU
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On Semiconductor
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - NPN 600mV @ 2mA, 20mA 300 V
2SA1381DSTU
2SA1381DSTU
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On Semiconductor
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 - - - - - - - - 100 mA 60 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
2SA1381ESTU
2SA1381ESTU
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On Semiconductor
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
2SA1381FSTU
2SA1381FSTU
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On Semiconductor
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 - - - - - - - - 100 mA 160 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
FJP5200RTU
FJP5200RTU
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On Semiconductor
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 - - - - - - - - 17 A 55 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 80 W - - TO-220-3 - NPN 3V @ 800mA, 8A 250 V
2SD2185GRL
2SD2185GRL
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 200mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - NPN 300mV @ 50mA, 1A 50 V
2SA1791GRL
2SA1791GRL
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 250 @ 2mA, 10V - - - 250MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F3 - PNP 300mV @ 1mA, 10mA 50 V
2SC5939G0L
2SC5939G0L
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 75 @ 5mA, 4V - - - 2.7GHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - NPN 500mV @ 4mA, 20mA 10 V
2SC5946G0L
2SC5946G0L
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 25 @ 2mA, 10V - - - 1.6GHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - NPN - 20 V
2SC6036G0L
2SC6036G0L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 200MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - NPN 250mV @ 10mA, 200mA 12 V
2SD2620G0L
2SD2620G0L
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Panasonic Electronic Components
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 200MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F3 - NPN 200mV @ 1mA, 10mA 100 V
2DB1119S-13
2DB1119S-13
Diodes Incorporated
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 - - - - - - - - 1 A 140 @ 50mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 700mV @ 50mA, 500mA 25 V
BC847BLD-7
BC847BLD-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 150 @ 10mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 400mV @ 5mA, 100mA 45 V
BC858A-7-F
BC858A-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 30 V
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About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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