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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANTX2N2222AL
JANTX2N2222AL
Microchip Technology
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 800 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 500 mW TO-218 NPN 1V @ 50mA, 500mA 50 V
JANTX2N2907AL
JANTX2N2907AL
Microchip Technology
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 600 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 500 mW TO-206AA (TO-18) PNP 1.6V @ 50mA, 500mA 60 V
JANTX2N3057A
JANTX2N3057A
Microchip Technology
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 1 A 50 @ 500mA, 10V - Through Hole -65°C ~ 200°C (TJ) 500 mW TO-46 NPN 500mV @ 50mA, 500mA 80 V
JANTX2N3439L
JANTX2N3439L
Microchip Technology
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 1 A 40 @ 20mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-5 NPN 500mV @ 4mA, 50mA 350 V
JANTX2N3737
JANTX2N3737
Microchip Technology
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 1.5 A 20 @ 1A, 1.5V - Through Hole -65°C ~ 200°C (TJ) 500 mW TO-46 (TO-206AB) NPN 900mV @ 100mA, 1A 40 V
JANTXV2N2484
JANTXV2N2484
Microchip Technology
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 50 mA 225 @ 10mA, 5V - Through Hole -65°C ~ 200°C (TJ) 360 mW TO-18 NPN 300mV @ 100µA, 1mA 60 V
JANTXV2N2905AL
JANTXV2N2905AL
Microchip Technology
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 600 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-5 PNP 1.6V @ 50mA, 500mA 60 V
JANTXV2N2906AUB
JANTXV2N2906AUB
Microchip Technology
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 600 mA 40 @ 150mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 500 mW UB PNP 1.6V @ 50mA, 500mA 60 V
2N2222AUBTXV
2N2222AUBTXV
TT Electronics/BI
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 800 mA 75 @ 1mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 300 mW 4-CLCC (3.05x2.415) NPN 1V @ 15mA, 500mA 50 V
HCT2222A
HCT2222A
TT Electronics/BI
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 - - - Surface Mount - - 4-SMD NPN - -
HCT2222ATX
HCT2222ATX
TT Electronics/BI
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 - - - Surface Mount - - 4-SMD NPN - -
HCT2222ATXV
HCT2222ATXV
TT Electronics/BI
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 - - - Surface Mount - - 4-SMD NPN - -
2SC2859-GR(TE85L,F
2SC2859-GR(TE85L,F
Toshiba
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 500 mA 200 @ 100mA, 1V 300MHz Surface Mount 125°C (TJ) 150 mW S-Mini NPN 250mV @ 10mA, 100mA 30 V
2SC2859-O(TE85L,F)
2SC2859-O(TE85L,F)
Toshiba
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 500 mA 70 @ 100mA, 1V 300MHz Surface Mount 125°C (TJ) 150 mW S-Mini NPN 250mV @ 10mA, 100mA 30 V
2SA1954-A(TE85L,F)
2SA1954-A(TE85L,F)
Toshiba
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 500 mA 300 @ 10mA, 2V 130MHz Surface Mount 125°C (TJ) 100 mW SC-70 PNP 250mV @ 10mA, 200mA 12 V
FJN3303FTA
FJN3303FTA
Download Datasheet for FJN3303FTA
On Semiconductor
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 1.5 A 14 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 650 mW TO-92-3 NPN 3V @ 500mA, 1.5A 400 V
KSH42CTM
KSH42CTM
Download Datasheet for KSH42CTM
On Semiconductor
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 6 A 15 @ 3A, 4V 3MHz Surface Mount 150°C (TJ) 20 W D-Pak PNP 1.5V @ 600mA, 6A 100 V
APT13005SU-G1
APT13005SU-G1
Download Datasheet for APT13005SU-G1
Diodes Incorporated
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 3.2 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 1V @ 750mA, 3A 450 V
APT13003EZTR-G1
APT13003EZTR-G1
Diodes Incorporated
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 1.5 A 13 @ 500mA, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 1.1 W TO-92 NPN 400mV @ 250mA, 1A 465 V
APT13003LZTR-G1
APT13003LZTR-G1
Diodes Incorporated
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 800 mA 6 @ 300mA, 10V - Through Hole -55°C ~ 150°C (TJ) 800 mW TO-92 NPN 500mV @ 40mA, 200mA 450 V
APT13003SZTR-G1
APT13003SZTR-G1
Download Datasheet for APT13003SZTR-G1
Diodes Incorporated
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 1.3 A 5 @ 1A, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 1.1 W TO-92 NPN 1.2V @ 250mA, 1A 450 V
STD127DT4
STD127DT4
STMicroelectronics
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 4 A 10 @ 1A, 5V - Surface Mount 150°C (TJ) 35 W DPAK NPN 1.3V @ 1A, 4A 400 V
2N4014 PBFREE
2N4014 PBFREE
Download Datasheet for 2N4014 PBFREE
Central Semiconductor Corp
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 1.7µA (ICBO) 60 @ 100mA, 1V 300MHz Through Hole - - TO-18 NPN - 50 V
2N4410 TIN/LEAD
2N4410 TIN/LEAD
Download Datasheet for 2N4410 TIN/LEAD
Central Semiconductor Corp
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 250 mA 60 @ 10mA, 1V 300MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 100µA, 1mA 80 V
2N5303 PBFREE
2N5303 PBFREE
Download Datasheet for 2N5303 PBFREE
Central Semiconductor Corp
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 20 A - 2MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-3 NPN - 80 V
2N5885 PBFREE
2N5885 PBFREE
Download Datasheet for 2N5885 PBFREE
Central Semiconductor Corp
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 25 A 20 @ 10A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-3 NPN 4V @ 6.25A, 25A 60 V
2N6041 PBFREE
2N6041 PBFREE
Download Datasheet for 2N6041 PBFREE
Central Semiconductor Corp
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 8 A 1000 @ 4A, 4V 4MHz Through Hole -65°C ~ 150°C (TJ) 75 W TO-220-3 PNP - Darlington 2V @ 16mA, 4A 80 V
2SA2124-S-TD-E
2SA2124-S-TD-E
On Semiconductor
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 2 A 200 @ 100mA, 2V 440MHz Surface Mount - 3.5 W PCP PNP 400mV @ 75mA, 1.5A 30 V
2SA2125-S-TD-E
2SA2125-S-TD-E
On Semiconductor
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 3 A 200 @ 100mA, 2V 390MHz Surface Mount - 3.5 W PCP PNP 500mV @ 100mA, 2A 50 V
2SA2125-S-TD-H
2SA2125-S-TD-H
On Semiconductor
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 3 A 200 @ 100mA, 2V 390MHz Surface Mount - 3.5 W PCP PNP 500mV @ 100mA, 2A 50 V
2SB1203S-H-TL-E
2SB1203S-H-TL-E
On Semiconductor
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 5 A 140 @ 500mA, 2V 130MHz Surface Mount 150°C (TJ) 1 W TP-FA PNP 550mV @ 150mA, 3A 50 V
2SB1203T-H-TL-E
2SB1203T-H-TL-E
On Semiconductor
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 5 A 200 @ 500mA, 2V 130MHz Surface Mount 150°C (TJ) 1 W TP-FA PNP 550mV @ 150mA, 3A 50 V
NSVMMBT6517LT1G
NSVMMBT6517LT1G
Download Datasheet for NSVMMBT6517LT1G
On Semiconductor
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 100 mA 20 @ 50mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 1V @ 5mA, 50mA 350 V
PCP1203-P-TD-H
PCP1203-P-TD-H
On Semiconductor
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 1.5 A 200 @ 100mA, 2V 500MHz Surface Mount 150°C (TJ) 1.3 W PCP NPN 225mV @ 15mA, 750mA 30 V
2N3251A
2N3251A
Microsemi Corporation
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 200 mA 100 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 360 mW TO-39 (TO-205AD) PNP 500mV @ 5mA, 50mA 60 V
2N3778
2N3778
Download Datasheet for 2N3778
Microchip Technology
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 - - - Through Hole - - TO-5 - - -
2N3866
2N3866
Microsemi Corporation
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 400 mA 15 @ 50mA, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1V @ 10mA, 100mA 30 V
2N5578
2N5578
Microsemi Corporation
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 - - - - - - - - - -
JAN2N1482
JAN2N1482
Microchip Technology
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 1.5 A 35 @ 200mA, 4V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 750mV @ 10mA, 200mA 55 V
JAN2N6351
JAN2N6351
Microchip Technology
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 5 A 1000 @ 5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-33 NPN - Darlington 2.5V @ 10mA, 5A 150 V
JANS2N5339U3
JANS2N5339U3
Microchip Technology
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 5 A 60 @ 2A, 2V - Surface Mount -65°C ~ 200°C (TJ) 1 W SMD5 NPN 1.2V @ 500mA, 5A 100 V
JANTX2N1613
JANTX2N1613
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-39 NPN 1.5V @ 15mA, 150mA 30 V
JANTXV2N5662
JANTXV2N5662
Microchip Technology
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 2 A 40 @ 500mA, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 800mV @ 400mA, 2A 200 V
JAN2N1489
JAN2N1489
Microsemi Corporation
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 6 A 25 @ 1.5A, 4V - Through Hole 200°C (TJ) 75 W TO-33 (TO-204AA) NPN 3V @ 300mA, 1.5A 40 V
JANTX2N2369AU
JANTX2N2369AU
Microchip Technology
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 400nA 20 @ 100mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 500 mW UB NPN 450mV @ 10mA, 100mA 15 V
JAN2N2432
JAN2N2432
Microchip Technology
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 100 mA 80 @ 1mA, 5V - Through Hole -65°C ~ 175°C (TJ) 360 mW TO-18 (TO-206AA) NPN 150mV @ 500µA, 10mA 30 V
JAN2N2432A
JAN2N2432A
Microchip Technology
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 100 mA 80 @ 1mA, 5V - Through Hole -65°C ~ 175°C (TJ) 360 mW TO-18 (TO-206AA) NPN 150mV @ 500µA, 10mA 45 V
JANTX2N2432A
JANTX2N2432A
Microchip Technology
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 100 mA 80 @ 1mA, 5V - Through Hole -65°C ~ 175°C (TJ) 300 mW TO-18 (TO-206AA) NPN 0.15mV @ 500µA, 10V 45 V
JANTX2N2944A
JANTX2N2944A
Microsemi Corporation
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 100 mA 100 @ 1mA, 500mV - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-46 (TO-206AB) PNP - 10 V
JANTXV2N3467
JANTXV2N3467
Microchip Technology
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 1 A 40 @ 500mA, 1V - Through Hole -55°C ~ 175°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.2V @ 100mA, 1A 40 V
Showing 19651-19700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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