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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANSD2N2907AL
JANSD2N2907AL
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSP2N2907AL
JANSP2N2907AL
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSR2N2904AL
JANSR2N2904AL
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 600 mW - - TO-5AA - PNP 1.6V @ 50mA, 500mA 60 V
JANSR2N2905AL
JANSR2N2905AL
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 600 mW - - TO-5AA - PNP 1.6V @ 50mA, 500mA 60 V
JANSM2N2907A
JANSM2N2907A
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSR2N3637
JANSR2N3637
Microchip Technology
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 - - - - - - - - 10 µA 100 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JANS2N3499L
JANS2N3499L
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) - - - TO-5 - NPN 600mV @ 30mA, 300mA 100 V
JANSL2N2906AL
JANSL2N2906AL
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSL2N2906A
JANSL2N2906A
Microchip Technology
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JANSD2N2906AL
JANSD2N2906AL
Microchip Technology
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JANSP2N2906AL
JANSP2N2906AL
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSM2N2906AL
JANSM2N2906AL
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSP2N2906A
JANSP2N2906A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSD2N2906A
JANSD2N2906A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSM2N2906A
JANSM2N2906A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSF2N5153L
JANSF2N5153L
Microchip Technology
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 - - - - - - - - 1 mA 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 500mA, 5A 80 V
JANS2N3019S
JANS2N3019S
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 50mA, 500mA 80 V
JANSG2N2221AL
JANSG2N2221AL
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANSF2N2221AL
JANSF2N2221AL
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANSG2N2221A
JANSG2N2221A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANSF2N2221A
JANSF2N2221A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANS2N3637L
JANS2N3637L
Microchip Technology
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 - - - - - - - - 1 A 100 @ 10mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 175 V
JANS2N2484UBC
JANS2N2484UBC
Microchip Technology
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - NPN 300mV @ 100µA, 1mA 60 V
JANS2N2484UBC/TR
JANS2N2484UBC/TR
Microchip Technology
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 300mV @ 100µA, 1mA 60 V
JANSR2N2222AL
JANSR2N2222AL
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANSD2N2222AUB
JANSD2N2222AUB
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSP2N2222AUB
JANSP2N2222AUB
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2222AUB
JANSM2N2222AUB
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2222AUB/TR
JANSM2N2222AUB/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSD2N2222AUB/TR
JANSD2N2222AUB/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSP2N2907AUB
JANSP2N2907AUB
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSD2N2907AUB
JANSD2N2907AUB
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSP2N2907AUB/TR
JANSP2N2907AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSL2N2907AUB/TR
JANSL2N2907AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSD2N2907AUB/TR
JANSD2N2907AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSM2N2907AUB/TR
JANSM2N2907AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
2SC4710LS
2SC4710LS
On Semiconductor
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JANSF2N2907A
JANSF2N2907A
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSF2N2906AL
JANSF2N2906AL
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSF2N2907AL
JANSF2N2907AL
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSF2N2906A
JANSF2N2906A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANSL2N2907AUB
JANSL2N2907AUB
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JAN2N5339U3
JAN2N5339U3
Microchip Technology
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 - - - - - - - - 100 µA 60 @ 2A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U-3 (TO-276AA) - NPN 1.2V @ 500mA, 5A 100 V
JANKCB2N5004
JANKCB2N5004
Microchip Technology
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - Die - NPN 1.5V @ 500mA, 5A 80 V
40348
40348
Microchip Technology
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2N6648
2N6648
Microchip Technology
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 5 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 100µA, 10A 40 V
2N6649
2N6649
Microchip Technology
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 5 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 100µA, 10A 60 V
2N6650
2N6650
Microchip Technology
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 5 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 100µA, 10A 80 V
2N6672
2N6672
Microchip Technology
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STN1116
STN1116
Microsemi Corporation
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Showing 19501-19550 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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