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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5786
2N5786
Harris Semiconductor
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 - - - - - - - - 3.5 A 4 @ 3.2A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 2V @ 800mA, 3.2A 40 V
UPA1456H(1)-AZ
UPA1456H(1)-AZ
Renesas
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RJK0349DPA-01#J0
RJK0349DPA-01#J0
Renesas
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TIP105
TIP105
NTE Electronics
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220-3 - PNP - Darlington 2.5V @ 80mA, 8A 60 V
D44C11
D44C11
NTE Electronics
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 - - - - - - - - 4 A 100 @ 200mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 30 W - - TO-220 - NPN 500mV @ 50mA, 1A 80 V
2N6490
2N6490
Harris Semiconductor
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 - - - - - - - - 15 A 20 @ 5A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 1.8 W - - TO-220AB - PNP 3.5V @ 5A, 15A 60 V
2N6666
2N6666
NTE Electronics
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 - - - - - - - - 8 A 1000 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220 - PNP - Darlington 3V @ 80mA, 8A 40 V
2N6667
2N6667
NTE Electronics
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 3V @ 100mA, 10A 60 V
2N5871
2N5871
Harris Semiconductor
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 - - - - - - - - 7 A 2.5 @ 4A, 20V - - - 4MHz - - Through Hole - 115 W - - TO-3 - PNP - 60 V
NTE2695
NTE2695
NTE Electronics
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 - - - - - - - - 4 A 40 @ 200mA, 1V - - - 40MHz - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-126 - PNP 600mV @ 100mA, 1A 100 V
2N6739
2N6739
Harris Semiconductor
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 - - - - - - - - 8 A 10 @ 5A, 3V - - - 60MHz - - Through Hole -65°C ~ 150°C (TJ) 100 W - - TO-220AB - NPN 2V @ 4A, 8A 350 V
TIP33A
TIP33A
NTE Electronics
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 - - - - - - - - 10 A 100 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-218 - NPN - 60 V
TIP33B
TIP33B
NTE Electronics
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 - - - - - - - - 10 A 100 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-218 - NPN - 80 V
NTE25
NTE25
NTE Electronics
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 - - - - - - - - 1 A 40 @ 250mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 850 mW - - TO-237 - PNP 1.5V @ 100mA, 1A 80 V
2N6668
2N6668
NTE Electronics
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220 - PNP - Darlington 3V @ 100mA, 10A 80 V
2SA1652-AZ
2SA1652-AZ
Renesas
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NTE159
NTE159
NTE Electronics
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 - - - - - - - - 800 mA 50 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 80 V
NTE11
NTE11
NTE Electronics
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 - - - - - - - - 5 A 340 @ 500mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92 - NPN 1V @ 100mA, 3A 20 V
MJH13090
MJH13090
Harris Semiconductor
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 - - - - - - - - 15 A 8 @ 10A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 125 W - - TO-218 Isolated - NPN 3V @ 3A, 15A 400 V
2N3714
2N3714
NTE Electronics
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 - - - - - - - - 10 A 25 @ 1A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-3 - NPN 1V @ 500mA, 5A 80 V
NTE294
NTE294
NTE Electronics
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - TO-92L - PNP 400mV @ 50mA, 500mA 50 V
MJE13007
MJE13007
NTE Electronics
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 - - - - - - - - 8 A 5 @ 5A, 5V - - - 14MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220 - NPN 3V @ 2A, 8A 400 V
BD750A
BD750A
Harris Semiconductor
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - - - - Through Hole 200°C (TJ) 200 W - - TO-3 - PNP 1V @ 500mA, 5A 120 V
BD751A
BD751A
Harris Semiconductor
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NTE2427
NTE2427
NTE Electronics
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 - - - - - - - - 500 mA 2000 @ 500mA, 10V - - - - - - Surface Mount 150°C (TJ) 1 W - - SOT-89 - PNP - Darlington 1.3V @ 500µA, 500mA 80 V
TIP3055
TIP3055
NTE Electronics
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 - - - - - - - - 15 A 20 @ 4A, 4V - - - 3MHz - - Through Hole - 90 W - - TO-218 - NPN - 100 V
MJE15031
MJE15031
NTE Electronics
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 - - - - - - - - 8 A 20 @ 4A, 2V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220 - PNP 500mV @ 100mA, 1A 150 V
CA3127ER2323
CA3127ER2323
Harris Semiconductor
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NTE16005
NTE16005
NTE Electronics
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 - - - - - - - - 2 A 30 @ 500mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 10 W - - TO-39 - NPN 500mV @ 50mA, 500mA 75 V
2N6491
2N6491
Harris Semiconductor
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 - - - - - - - - 15 A 20 @ 5A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 1.8 W - - TO-220AB - PNP 3.5V @ 5A, 15A 80 V
HAT1128R01-EL-E
HAT1128R01-EL-E
Renesas
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NTE16004
NTE16004
NTE Electronics
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 - - - - - - - - 2 A 30 @ 500mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 10 W - - TO-39 - PNP 700mV @ 50mA, 500mA 75 V
2SB1400-E#0205
2SB1400-E#0205
Renesas
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2N1700
2N1700
Harris Semiconductor
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NTE193
NTE193
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole 150°C (TJ) 560 mW - - TO-92HS - PNP 300mV @ 3mA, 50mA 50 V
BD750B
BD750B
Harris Semiconductor
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NTE398
NTE398
NTE Electronics
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 - - - - - - - - 2 A 60 @ 400mA, 10V - - - 5MHz - - Through Hole 150°C (TJ) 25 W - - TO-220 - PNP 1V @ 50mA, 500A 150 V
SJ83180
SJ83180
On Semiconductor
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2N2905A
2N2905A
NTE Electronics
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole - 600 mW - - TO-39 - PNP 1.6V @ 50mA, 500mA 40 V
RJK0384DPA-00#J53
RJK0384DPA-00#J53
Renesas
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NTE382
NTE382
NTE Electronics
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 - - - - - - - - 1 A 160 @ 150mA, 5V - - - 140MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92L - NPN 1V @ 50mA, 500mA 100 V
NTE157
NTE157
NTE Electronics
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 - - - - - - - - 500 mA 20 @ 100mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 20 W - - TO-126 - NPN 10V @ 100mA, 500mA 300 V
RJH6676
RJH6676
Harris Semiconductor
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 - - - - - - - - 15 A 8 @ 15A, 3V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 175 W - - TO-218 Isolated - NPN 1.5V @ 3A, 15A 300 V
UPA1428AH-AZ
UPA1428AH-AZ
Renesas
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UPA1436AH-AZ
UPA1436AH-AZ
Renesas
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UPA1428AH(1)-AZ
UPA1428AH(1)-AZ
Renesas
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NTE152
NTE152
NTE Electronics
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 - - - - - - - - 4 A 40 @ 500mA, 5V - - - 8MHz - - Through Hole 150°C (TJ) 40 W - - TO-220 - NPN 1.5V @ 300mA, 3A 90 V
MJ15016
MJ15016
NTE Electronics
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 - - - - - - - - 15 A 20 @ 4A, 4V - - - 18MHz - - Through Hole -65°C ~ 200°C (TJ) 180 W - - TO-3 - PNP 5V @ 7A, 15A 120 V
NTE130
NTE130
NTE Electronics
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 - - - - - - - - 15 A 20 @ 4A, 4V - - - 2.5MHz - - Through Hole -65°C ~ 200°C (TJ) 115 W - - TO-3 - NPN 3V @ 3.3A, 10A 60 V
SJ6522AG
SJ6522AG
On Semiconductor
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Showing 19351-19400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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