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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BF393ZL1
BF393ZL1
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 500 mA 40 @ 10mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 2V @ 2mA, 20mA 300 V
BF393ZL1G
BF393ZL1G
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 500 mA 40 @ 10mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 2V @ 2mA, 20mA 300 V
BF420ZL1G
BF420ZL1G
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 50 mA 50 @ 25mA, 20V 60MHz Through Hole -55°C ~ 150°C (TJ) 830 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
BF421ZL1
BF421ZL1
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 50 mA 50 @ 25mA, 20V 60MHz Through Hole -55°C ~ 150°C (TJ) 830 mW TO-92 (TO-226) PNP 500mV @ 2mA, 20mA 300 V
BF721T1
BF721T1
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 50 mA 50 @ 25mA, 20V 60MHz Surface Mount -65°C ~ 150°C (TJ) 1.5 W SOT-223 (TO-261) PNP 800mV @ 5mA, 30mA 300 V
BSP16T1
BSP16T1
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 100 mA 30 @ 50mA, 10V 15MHz Surface Mount -65°C ~ 150°C (TJ) 1.5 W SOT-223 (TO-261) PNP 2V @ 5mA, 50mA 300 V
BSP52T3
BSP52T3
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 1 A 2000 @ 500mA, 10V - Surface Mount -65°C ~ 150°C (TJ) 800 mW SOT-223 (TO-261) NPN - Darlington 1.3V @ 500µA, 500mA 80 V
BSS64LT1
BSS64LT1
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 100 mA 20 @ 10mA, 1V 60MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 200mV @ 15mA, 50mA 80 V
BSV52LT1
BSV52LT1
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 100 mA 40 @ 10mA, 1V 400MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 400mV @ 5mA, 50mA 12 V
BU323Z
BU323Z
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 10 A 500 @ 5A, 4.6V 2MHz Through Hole -65°C ~ 175°C (TJ) 150 W SOT-93 NPN - Darlington 1.7V @ 250mA, 10A 350 V
BU323ZG
BU323ZG
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 10 A 500 @ 5A, 4.6V 2MHz Through Hole -65°C ~ 175°C (TJ) 150 W TO-247-3 NPN - Darlington 1.7V @ 250mA, 10A 350 V
BUB323Z
BUB323Z
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 10 A 500 @ 5A, 4.6V 2MHz Surface Mount -65°C ~ 175°C (TJ) 150 W D²PAK NPN - Darlington 1.7V @ 250mA, 10A 350 V
BUD42D
BUD42D
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 4 A 10 @ 2A, 5V - Surface Mount -65°C ~ 150°C (TJ) 25 W DPAK NPN 1V @ 500mA, 2A 350 V
BUD42D-001
BUD42D-001
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 4 A 10 @ 2A, 5V - Surface Mount -65°C ~ 150°C (TJ) 25 W DPAK NPN 1V @ 500mA, 2A 350 V
BUD42D-1G
BUD42D-1G
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 4 A 10 @ 2A, 5V - Surface Mount -65°C ~ 150°C (TJ) 25 W DPAK NPN 1V @ 500mA, 2A 350 V
BUK92150-55A/CDJ
BUK92150-55A/CDJ
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Nexperia USA Inc.
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 - - - Surface Mount - - DPAK - - -
MPSA12RLRPG
MPSA12RLRPG
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 100nA (ICBO) 20000 @ 10mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1V @ 10µA, 10mA 20 V
MPSA13G
MPSA13G
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA13RLRM
MPSA13RLRM
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA13RLRP
MPSA13RLRP
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA13ZL1
MPSA13ZL1
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA14G
MPSA14G
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA14RLRP
MPSA14RLRP
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA14RLRPG
MPSA14RLRPG
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA18G
MPSA18G
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 200 mA 500 @ 10mA, 5V 160MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 300mV @ 5mA, 50mA 45 V
MPSA18RLRM
MPSA18RLRM
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 200 mA 500 @ 10mA, 5V 160MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 300mV @ 5mA, 50mA 45 V
BUK9277-55A/CDJ
BUK9277-55A/CDJ
Download Datasheet for BUK9277-55A/CDJ
Nexperia USA Inc.
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 - - - Surface Mount - - DPAK - - -
MPSA18RLRP
MPSA18RLRP
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 200 mA 500 @ 10mA, 5V 160MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 300mV @ 5mA, 50mA 45 V
MPSA18RLRPG
MPSA18RLRPG
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 200 mA 500 @ 10mA, 5V 160MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 300mV @ 5mA, 50mA 45 V
MPSA27G
MPSA27G
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 500 mA 10000 @ 100mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 60 V
MPSA28RLRP
MPSA28RLRP
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 500 mA 10000 @ 100mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 80 V
MPSA28RLRPG
MPSA28RLRPG
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 500 mA 10000 @ 100mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 80 V
MPSA29G
MPSA29G
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 500 mA 10000 @ 100mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 100 V
MPSA42RLRFG
MPSA42RLRFG
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
MPSA42RLRP
MPSA42RLRP
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
MPSA42ZL1
MPSA42ZL1
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
BUK9C07-65BIT,118
BUK9C07-65BIT,118
Download Datasheet for BUK9C07-65BIT,118
Nexperia USA Inc.
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 - - - Surface Mount - - D2PAK-7 - - -
MPSA43G
MPSA43G
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 200 V
MPSA43RLRAG
MPSA43RLRAG
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 200 V
MPSA43ZL1G
MPSA43ZL1G
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 500 mA 25 @ 1mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 200 V
MPSA44RL1
MPSA44RL1
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 300 mA 50 @ 10mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 750mV @ 5mA, 50mA 400 V
MPSA44RL1G
MPSA44RL1G
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 300 mA 50 @ 10mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 750mV @ 5mA, 50mA 400 V
MPSA55G
MPSA55G
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 250mV @ 10mA, 100mA 60 V
MPSA56G
MPSA56G
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 250mV @ 10mA, 100mA 80 V
MPSA56RLRPG
MPSA56RLRPG
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 250mV @ 10mA, 100mA 80 V
MPSA56ZL1G
MPSA56ZL1G
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 250mV @ 10mA, 100mA 80 V
MPSA63G
MPSA63G
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63RLRMG
MPSA63RLRMG
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63RLRPG
MPSA63RLRPG
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63ZL1
MPSA63ZL1
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
Showing 19201-19250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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