Name: PMZB370UNE,315
SKU: PMZB370UNE,315

Categories

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	NXP Semiconductors
Current	900mA (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.16 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	78 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs	490mOhm @ 500mA, 4.5V
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1.05V @ 250µA

PMZB370UNE,315