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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5758
2N5758
Microchip Technology
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 - - - - - - - - 6 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - NPN - 100 V
2N3867U4
2N3867U4
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 - - - - - - - - 3 A 40 @ 1.5A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.5V @ 250mA, 2.5A 40 V
2N6341
2N6341
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 - - - - - - - - 50 µA 30 @ 10A, 2V - - - - - - Through Hole -65°C ~ 175°C (TJ) 200 W - - TO-3 - NPN 1.8V @ 2.5A, 25A 150 V
2N6339
2N6339
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2N6340
2N6340
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JANTXV2N3791
JANTXV2N3791
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 - - - - - - - - 10 A 30 @ 3A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 (TO-204AA) - PNP 2.5V @ 2A, 10A 60 V
JANTXV2N3792
JANTXV2N3792
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 - - - - - - - - 10 A 50 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 - PNP 2.5V @ 2A, 10A 80 V
2N6306
2N6306
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 - - - - - - - - 8 A 15 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C 125 W - - TO-204AD (TO-3) - NPN 5V @ 2A, 8A 250 V
2N5732
2N5732
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 - - - - - - - - 20 A - - - - - - - Through Hole - 75 W - - TO-204AD (TO-3) - NPN - 80 V
2N5737
2N5737
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 87 W - - TO-204AD (TO-3) - PNP 500mV @ 500µA, 5mA 60 V
2N5741
2N5741
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 - - - - - - - - 20 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 113 W - - TO-204AD (TO-3) - PNP 1.5V @ 1mA, 10mA 60 V
2N5760
2N5760
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 - - - - - - - - 6 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - NPN - 140 V
2N5759
2N5759
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 - - - - - - - - 6 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - PNP - 120 V
2N4959UB/TR
2N4959UB/TR
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2N5745
2N5745
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 - - - - - - - - 20 A 15 @ 10A, 2V - - - - - - Through Hole -55°C ~ 200°C (TJ) 5 W - - TO-204AD (TO-3) - PNP 1V @ 1A, 10A 80 V
2N5742
2N5742
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 - - - - - - - - 20 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 113 W - - TO-204AD (TO-3) - PNP 1.5V @ 1mA, 10mA 100 V
2N5734
2N5734
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 - - - - - - - - 30 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - PNP - 80 V
2N5738
2N5738
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 - - - - - - - - 10 A - - - - - - - Through Hole - 87.5 W - - TO-204AD (TO-3) - PNP - 100 V
JANS2N2906AL
JANS2N2906AL
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANTXV2N6383
JANTXV2N6383
Microchip Technology
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 40 V
JANTXV2N6384
JANTXV2N6384
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 60 V
JANTXV2N6385
JANTXV2N6385
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 80 V
2N6357
2N6357
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2N3790
2N3790
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - PNP - 80 V
2N3788
2N3788
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 - - - - - - - - 2 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 100 W - - TO-204AD (TO-3) - PNP - 325 V
2N4348
2N4348
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JANTXV2N6287
JANTXV2N6287
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 - - - - - - - - 1 mA 1500 @ 1A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 200mA, 20A 100 V
2N6511
2N6511
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 - - - - - - - - 7 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 120 W - - TO-204AD (TO-3) - PNP 1.5V @ 800µA, 4mA 250 V
2N6514
2N6514
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 - - - - - - - - 7 A - - - - - - - Through Hole - 120 W - - TO-204AD (TO-3) - PNP - 300 V
2N3917
2N3917
Microchip Technology
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 - - - - - - - - 2 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 20 W - - TO-204AD (TO-3) - PNP - 40 V
2N6513
2N6513
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 - - - - - - - - 7 A - - - - - - - Through Hole - 120 W - - TO-204AD (TO-3) - NPN - 350 V
2N6512
2N6512
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 - - - - - - - - 7 A 10 @ 4A, 3V - - - 3MHz - - Through Hole - 120 W - - TO-204AD (TO-3) - NPN 1.5V @ 800mA, 4A 300 V
2N3918
2N3918
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 - - - - - - - - 2 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 20 W - - TO-204AD (TO-3) - PNP - 40 V
2N6510
2N6510
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 - - - - - - - - 7 A - - - - - - - Through Hole - 120 W - - TO-204AD (TO-3) - NPN - 200 V
2N3920
2N3920
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 15 W - - TO-204AD (TO-3) - PNP - 60 V
JANTXV2N3716P
JANTXV2N3716P
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 - - - - - - - - 10 A 50 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AD (TO-3) - NPN 2.5V @ 2A, 10A 80 V
2N3789
2N3789
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 - - - - - - - - 10 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - PNP - 60 V
JANS2N5151
JANS2N5151
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 500mA, 5A 80 V
JANS2N5152
JANS2N5152
Microchip Technology
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 - - - - - - - - 1 mA 30 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 1.5V @ 500mA, 5A 80 V
2N6385P
2N6385P
Microchip Technology
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 80 V
JANTX2N5039
JANTX2N5039
Microchip Technology
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 - - - - - - - - 20 A 30 @ 2A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-3 (TO-204AA) - NPN 1V @ 1A, 10A 75 V
JANS2N2369AUA
JANS2N2369AUA
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 - - - - - - - - 400nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UA - NPN 450mV @ 10mA, 100mA 15 V
JANS2N2369AUA/TR
JANS2N2369AUA/TR
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 - - - - - - - - 400 nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UA - NPN 450mV @ 10mA, 100mA 15 V
2N6437
2N6437
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 - - - - - - - - 25 A - - - - - - - Through Hole 200°C (TJ) - - - TO-3 - PNP - 100 V
2N6438
2N6438
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2N6496
2N6496
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-204AD (TO-3) - PNP 1V @ 800µA, 8mA 110 V
JANTX2N5038
JANTX2N5038
Microchip Technology
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 - - - - - - - - 20 A 50 @ 2A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-3 (TO-204AA) - NPN 1V @ 1.2A, 12A 90 V
2N4931U4
2N4931U4
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 250 V
2N4958UB
2N4958UB
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2N4930U4
2N4930U4
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 200 V
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About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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