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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC57390P
2SC57390P
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Panasonic Electronic Components
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 - - - - - - - - 3 A 160 @ 1A, 4V - - - 180MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 375mA, 3A 60 V
2SA201000L
2SA201000L
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Panasonic Electronic Components
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 - - - - - - - - 2.5 A 200 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - PNP 320mV @ 50mA, 2.5A 15 V
2SA204600L
2SA204600L
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 160 @ 100mA, 2V - - - 170MHz - - Surface Mount 150°C (TJ) 400 mW - - Mini3-G1 - PNP 150mV @ 25mA, 500mA 20 V
2SB167900L
2SB167900L
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 - - - - - - - - 500 mA 130 @ 500mA, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 300mV @ 8mA, 400mA 10 V
2SC559200L
2SC559200L
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 - - - - - - - - 2.5 A 400 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - NPN 320mV @ 50mA, 2.5A 15 V
2SB07100SL
2SB07100SL
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 25 V
2SB0710AQL
2SB0710AQL
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB0710ARL
2SB0710ARL
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB0710ASL
2SB0710ASL
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB0792ARL
2SB0792ARL
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 - - - - - - - - 50 mA 130 @ 10mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 1V @ 3mA, 30mA 185 V
2SB0792ASL
2SB0792ASL
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 - - - - - - - - 50 mA 185 @ 10mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 1V @ 3mA, 30mA 185 V
2SB1218AQL
2SB1218AQL
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SB1218ARL
2SB1218ARL
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SB1218ASL
2SB1218ASL
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SD21360QA
2SD21360QA
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 - - - - - - - - 3 A 70 @ 1A, 4V - - - 220MHz - - Through Hole 150°C (TJ) 1.5 W - - MT-3-A1 - NPN 1.2V @ 375mA, 3A 60 V
2SD0602AQL
2SD0602AQL
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SD0602ARL
2SD0602ARL
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SD0602ASL
2SD0602ASL
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SD11490RL
2SD11490RL
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 200mV @ 1mA, 10mA 100 V
2SD11490SL
2SD11490SL
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 - - - - - - - - 20 mA 600 @ 2mA, 10V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 200mV @ 1mA, 10mA 100 V
2SD13280RL
2SD13280RL
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 400mV @ 20mA, 500mA 20 V
2SD13280SL
2SD13280SL
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 400mV @ 20mA, 500mA 20 V
DTC114T
DTC114T
On Semiconductor
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2SC3311AQA
2SC3311AQA
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SC3311ARA
2SC3311ARA
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SC3311ASA
2SC3311ASA
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SD14500RA
2SD14500RA
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD14500SA
2SD14500SA
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD14500TA
2SD14500TA
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 - - - - - - - - 500 mA 400 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD1423ARA
2SD1423ARA
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 600mV @ 30mA, 300mA 50 V
2SD19960RA
2SD19960RA
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
2SD19960SA
2SD19960SA
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
2SD19960TA
2SD19960TA
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 - - - - - - - - 500 mA 400 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
BFU530215
BFU530215
NXP Semiconductors
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BC807-16-7
BC807-16-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-25-7
BC807-25-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-40-7
BC807-40-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC817-25-7
BC817-25-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC817-40-7
BC817-40-7
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Diodes Incorporated
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC857AT-7
BC857AT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
BC857BT-7
BC857BT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
BC847AT-7
BC847AT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 600mV @ 5mA, 100mA 45 V
BC847BT-7
BC847BT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 600mV @ 5mA, 100mA 45 V
TIP112TU
TIP112TU
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On Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
BCR185SE6327
BCR185SE6327
Infineon Technologies
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ZXTS1000NE6TA
ZXTS1000NE6TA
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Diodes Incorporated
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 - - - - - - - - 1.25 A 200 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 885 mW - - SOT-23-6 - PNP + Diode (Isolated) 240mV @ 100mA, 1.25A 12 V
ZXTAM322TA
ZXTAM322TA
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Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 3A, 2V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - NPN 280mV @ 50mA, 4.5A 15 V
ZXTBM322TA
ZXTBM322TA
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Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 2A, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - NPN 270mV @ 125mA, 4.5A 20 V
ZXT1M322TA
ZXT1M322TA
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Diodes Incorporated
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 - - - - - - - - 4 A 180 @ 2.5A, 2V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - PNP 300mV @ 150mA, 4A 12 V
2SC15670S
2SC15670S
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 185 @ 150mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - NPN 400mV @ 50mA, 500mA 100 V
Showing 7101-7150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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