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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SA2125-TD-H
2SA2125-TD-H
On Semiconductor
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 390MHz - - Surface Mount 150°C (TJ) 3.5 W - - PCP - PNP 500mV @ 100mA, 2A 50 V
3STR1630
3STR1630
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STMicroelectronics
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 - - - - - - - - 6 A 180 @ 500mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-23-3 - NPN 300mV @ 500mA, 5A 30 V
DXT2011P5Q-13
DXT2011P5Q-13
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Diodes Incorporated
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 - - - - - - - - 6 A 100 @ 2A, 2V - - - 130MHz - - Surface Mount -55°C ~ 150°C (TJ) 3.2 W - - PowerDI™ 5 - NPN 220mV @ 500mA, 5A 100 V
BULB128-1
BULB128-1
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STMicroelectronics
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 - - - - - - - - 4 A 14 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-262 - NPN 500mV @ 1A, 4A 400 V
2N5306 TIN/LEAD
2N5306 TIN/LEAD
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Central Semiconductor Corp
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 - - - - - - - - 300 mA 7000 @ 2mA, 5V - - - 60MHz - - Through Hole -65°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 25 V
2SA1419S-TD-E
2SA1419S-TD-E
On Semiconductor
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PCP - PNP 500mV @ 50mA, 500mA 160 V
2SB1302S-TD-E
2SB1302S-TD-E
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On Semiconductor
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 - - - - - - - - 5 A 100 @ 500mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 1.3 W - - PCP - PNP 500mV @ 60mA, 3A 20 V
FCX717TA
FCX717TA
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 100mA, 2V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-89-3 - PNP 320mV @ 50mA, 3A 12 V
MJD45H11J
MJD45H11J
Nexperia USA Inc.
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 - - - - - - - - 8 A 60 @ 2A, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 1.75 W - - DPAK - PNP 1V @ 400mA, 8A 80 V
BUL805
BUL805
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STMicroelectronics
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 - - - - - - - - 5 A 10 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220 - NPN 800mV @ 600mA, 3A 450 V
MJD32C-TP
MJD32C-TP
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Micro Commercial
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.25 W - - D-Pak - PNP 1.2V @ 375mA, 3A 100 V
2SCR514RHZGTL
2SCR514RHZGTL
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - NPN 300mV @ 15mA, 300mA 80 V
NSS12100M3T5G
NSS12100M3T5G
Download Datasheet for NSS12100M3T5G
On Semiconductor
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 - - - - - - - - 1 A 120 @ 500mA, 2V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 625 mW - - SOT-723 - PNP 410mV @ 100mA, 1A 12 V
NJVMJD128T4G
NJVMJD128T4G
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On Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Surface Mount -65°C ~ 150°C (TJ) 1.75 W - - DPAK - PNP - Darlington 4V @ 80mA, 8A 120 V
2SCR514PHZGT100
2SCR514PHZGT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 300mV @ 15mA, 300mA 80 V
MJD42C-QJ
MJD42C-QJ
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Nexperia USA Inc.
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.6 W - - DPAK - PNP 1.5V @ 600mA, 6A 100 V
2N3811
2N3811
Solid State Devices Inc (SSDI)
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-78-6 - PNP - -
2SCR562F3TR
2SCR562F3TR
ROHM Semiconductor
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 - - - - - - - - 6 A 200 @ 500mA, 2V - - - 270MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - NPN 220mV @ 150mA, 3A 30 V
DXT2013P5-13
DXT2013P5-13
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 3.2 W - - PowerDI™ 5 - PNP 340mV @ 400mA, 4A 100 V
ZXTP19020DGTA
ZXTP19020DGTA
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Diodes Incorporated
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 - - - - - - - - 8 A 300 @ 100mA, 2V - - - 176MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - PNP 275mV @ 800mA, 8A 20 V
2N3807
2N3807
Solid State Devices Inc (SSDI)
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-78-6 - PNP - -
FMMT723QTA
FMMT723QTA
Download Datasheet for FMMT723QTA
Diodes Incorporated
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 - - - - - - - - 1 A 250 @ 500mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 625 mW - - SOT-23-3 - PNP 330mV @ 150mA, 1A 100 V
2SC5964-TD-E
2SC5964-TD-E
On Semiconductor
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 380MHz - - Surface Mount 150°C (TJ) 3.5 W - - PCP - NPN 290mV @ 100mA, 2A 50 V
2SAR562F3TR
2SAR562F3TR
ROHM Semiconductor
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 - - - - - - - - 6 A 200 @ 500mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - PNP 300mV @ 150mA, 3A 30 V
2SCR544P5T100
2SCR544P5T100
ROHM Semiconductor
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 - - - - - - - - 2.5 A 120 @ 100mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 300mV @ 50mA, 1A 80 V
2SAR512RHZGTL
2SAR512RHZGTL
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 430MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 400mV @ 35mA, 700mA 30 V
UMT4401U3HZGT106
UMT4401U3HZGT106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 750mV @ 50mA, 500mA 40 V
2SD2671TL
2SD2671TL
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 200mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - NPN 370mV @ 75mA, 1.5A 30 V
2N3806
2N3806
Solid State Devices Inc (SSDI)
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-78-6 - PNP - -
ZXTN2011GTA
ZXTN2011GTA
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Diodes Incorporated
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 - - - - - - - - 6 A 100 @ 2A, 2V - - - 130MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - NPN 220mV @ 500mA, 5A 100 V
UMT4403U3HZGT106
UMT4403U3HZGT106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 750mV @ 50mA, 500mA 40 V
MJD45H11AJ
MJD45H11AJ
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Nexperia USA Inc.
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 - - - - - - - - 8 A 60 @ 2A, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 1.75 W - - DPAK - PNP 1V @ 400mA, 8A 80 V
2SAR574D3TL1
2SAR574D3TL1
ROHM Semiconductor
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 - - - - - - - - 2 A 120 @ 100mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - PNP 400mV @ 50mA, 1A 80 V
CEN1373 TR TIN/LEAD
CEN1373 TR TIN/LEAD
Central Semiconductor Corp
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
MJD42CJ
MJD42CJ
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Nexperia USA Inc.
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.6 W - - DPAK - PNP 1.5V @ 600mA, 6A 100 V
2SAR542PFRAT100
2SAR542PFRAT100
ROHM Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 240MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 100mA, 2A 30 V
MJD361T4-A
MJD361T4-A
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STMicroelectronics
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 - - - - - - - - 3 A 60 @ 1A, 4V - - - - - - Surface Mount 150°C (TJ) 15 W - - DPAK - PNP 900mV @ 150mA, 3A 60 V
PBSS305PX,115
PBSS305PX,115
Download Datasheet for PBSS305PX,115
Nexperia USA Inc.
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 - - - - - - - - 4 A 120 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2.1 W - - SOT-89 - PNP 420mV @ 235mA, 4.7A 80 V
NSV40300MZ4T1G
NSV40300MZ4T1G
Download Datasheet for NSV40300MZ4T1G
On Semiconductor
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 - - - - - - - - 3 A 175 @ 1A, 1V - - - 160MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223 (TO-261) - PNP 400mV @ 300mA, 3A 40 V
PBSS303NZ,135
PBSS303NZ,135
Download Datasheet for PBSS303NZ,135
Nexperia USA Inc.
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 - - - - - - - - 5.5 A 250 @ 2A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - NPN 240mV @ 275mA, 5.5A 30 V
STD13003T4
STD13003T4
STMicroelectronics
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 - - - - - - - - 1.5 A 5 @ 1A, 2V - - - - - - Surface Mount 150°C (TJ) 20 W - - DPAK - NPN 3V @ 500mA, 1.5A 400 V
PBSS304PX,115
PBSS304PX,115
Download Datasheet for PBSS304PX,115
Nexperia USA Inc.
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 - - - - - - - - 4.2 A 150 @ 2A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 2.1 W - - SOT-89 - PNP 310mV @ 210mA, 4.2A 60 V
CXTA27 TR PBFREE
CXTA27 TR PBFREE
Download Datasheet for CXTA27 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.2 W - - SOT-89 - NPN - Darlington 1.5V @ 100µA, 100mA 60 V
NJVMJD32T4G
NJVMJD32T4G
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On Semiconductor
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.56 W - - DPAK - PNP 1.2V @ 375mA, 3A 40 V
2SCR564F3TR
2SCR564F3TR
ROHM Semiconductor
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 - - - - - - - - 4 A 120 @ 500mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - NPN 300mV @ 100mA, 2A 80 V
2SCR563F3TR
2SCR563F3TR
ROHM Semiconductor
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 - - - - - - - - 6 A 180 @ 500mA, 3V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - NPN 350mV @ 150mA, 3A 50 V
STI13005-1
STI13005-1
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STMicroelectronics
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 - - - - - - - - 3 A 8 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-251 (IPAK) - NPN 5V @ 750mA, 3A 400 V
STT13005FP
STT13005FP
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STMicroelectronics
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 - - - - - - - - 2 A 10 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 30 W - - SOT-32FP - NPN 1.5V @ 400mA, 1.6A 400 V
BUL705
BUL705
Download Datasheet for BUL705
STMicroelectronics
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 - - - - - - - - 5 A 16 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220 - NPN 800mV @ 1A, 4A 400 V
2SA2153-TD-E
2SA2153-TD-E
Download Datasheet for 2SA2153-TD-E
On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 420MHz - - Surface Mount 150°C (TJ) 3.5 W - - PCP - PNP 400mV @ 50mA, 1A 50 V
Showing 7051-7100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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