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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N6317
2N6317
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Central Semiconductor Corp
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 - - - - - - - - 7 A 35 @ 500mA, 4V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 90 W - - TO-66 - - 2V @ 1.75A, 7A 60 V
CEN853
CEN853
Central Semiconductor Corp
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2N6467
2N6467
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Central Semiconductor Corp
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 - - - - - - - - 4 A - - - - 5MHz - - Through Hole - 40 W - - TO-66 - - - 100 V
BC337-16 B1
BC337-16 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-40-B0 A1G
BC338-40-B0 A1G
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-40-B0 B1G
BC338-40-B0 B1G
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC550A A1
BC550A A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC337-16-B0 A1
BC337-16-B0 A1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC546B A1
BC546B A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC546B B1
BC546B B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC547A A1
BC547A A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
MN638S
MN638S
Sanken
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 - - - - - - - - 6 A 1500 @ 3A, 2V - - - - - - Surface Mount 150°C (TJ) 60 W - - TO-220S - NPN 1.5V @ 20mA, 4A 430 V
BC338-40 A1
BC338-40 A1
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC337-40 B1
BC337-40 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC337-25-B0 B1G
BC337-25-B0 B1G
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC547A B1
BC547A B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC546C B1
BC546C B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC338-16-B0 B1
BC338-16-B0 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC549B B1
BC549B B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC546C A1
BC546C A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC337-16 A1
BC337-16 A1
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-16 A1
BC338-16 A1
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC549A B1
BC549A B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
KTC3198-O-B0 B1G
KTC3198-O-B0 B1G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-Y-M0 B2G
KTC3198-Y-M0 B2G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 120 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-O-M0 A2G
KTC3198-O-M0 A2G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
BC337-25-B0 A1
BC337-25-B0 A1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC547C B1
BC547C B1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
KTC3198-O-M0 B2G
KTC3198-O-M0 B2G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-Y-M0 A2G
KTC3198-Y-M0 A2G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 120 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
BC549B A1
BC549B A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
KTC3198-Y-B0 A1G
KTC3198-Y-B0 A1G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 120 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
BC338-16-B0 A1
BC338-16-B0 A1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC856W/ZLX
BC856W/ZLX
NXP Semiconductors
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BC549C A1
BC549C A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC338-25-B0 A1
BC338-25-B0 A1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC337-40-B0 A1G
BC337-40-B0 A1G
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-25-B0 B1
BC338-25-B0 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-40-B0 A1
BC338-40-B0 A1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC337-25 B1
BC337-25 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-25-B0 A1G
BC338-25-B0 A1G
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Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC337-25-B0 B1
BC337-25-B0 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
KTC3198-GR-B0 A1G
KTC3198-GR-B0 A1G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 200 @ 150mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
BC550C A1
BC550C A1
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Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
FCG1007
FCG1007
Sanken
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 - - - - - - - - 7 A 60 @ 500mA, 5V - - - - - - Through Hole - - - - TO-220F - NPN - 100 V
BC337-40-B0 B1
BC337-40-B0 B1
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
NSVBC857CWT1G-M01
NSVBC857CWT1G-M01
On Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - - 650mV @ 5mA, 100mA 45 V
TIP112 SL
TIP112 SL
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Central Semiconductor Corp
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
TIP112M SL
TIP112M SL
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Central Semiconductor Corp
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 - - - - - - - - 2 A 500 @ 2A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
TIP112
TIP112
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Central Semiconductor Corp
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
Showing 6951-7000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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