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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FZT751TA-79
FZT751TA-79
Diodes Incorporated
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D882-O-TP
D882-O-TP
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Micro Commercial
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 - - - - - - - - 3 A 100 @ 1A, 2V - - - 90MHz - - Surface Mount 150°C (TJ) 1.25 W - - D-Pak - NPN 500mV @ 200mA, 2A 30 V
TIP30C-BP
TIP30C-BP
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Micro Commercial
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 - - - - - - - - 1 A 40 @ 200mA, 4V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 30 W - - TO-220AB - PNP 700mV @ 125mA, 1A 100 V
D882-Y-TP
D882-Y-TP
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Micro Commercial
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 90MHz - - Surface Mount 150°C (TJ) 1.25 W - - D-Pak - NPN 500mV @ 200mA, 2A 30 V
BC847AQCZ
BC847AQCZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - - 400mV @ 5mA, 100mA 45 V
BC847CQCZ
BC847CQCZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - - 400mV @ 5mA, 100mA 45 V
BC846AQCZ
BC846AQCZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - - 400mV @ 5mA, 100mA 65 V
BC847BQCZ
BC847BQCZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - - 400mV @ 5mA, 100mA 45 V
CP337V-2N4013-CT20
CP337V-2N4013-CT20
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Central Semiconductor Corp
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 360 mW - - Die - NPN 750mV @ 100mA, 1A 30 V
2N3725A PBFREE
2N3725A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 900mV @ 100mA, 1A 50 V
CP337V-2N3725-CT
CP337V-2N3725-CT
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Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 800 mW - - Die - NPN 950mV @ 100mA, 1A 50 V
2N3725 PBFREE
2N3725 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 950mV @ 100mA, 1A 50 V
2N3725A TIN/LEAD
2N3725A TIN/LEAD
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Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 900mV @ 100mA, 1A 50 V
CP337V-2N3725-CT20
CP337V-2N3725-CT20
Download Datasheet for CP337V-2N3725-CT20
Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 800 mW - - Die - NPN 950mV @ 100mA, 1A 50 V
2N3725 TIN/LEAD
2N3725 TIN/LEAD
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Central Semiconductor Corp
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 300MHz - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 950mV @ 100mA, 1A 50 V
JANTX2N2432AUB/TR
JANTX2N2432AUB/TR
Microchip Technology
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 - - - - - - - - 100 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
JANTX2N2432UB/TR
JANTX2N2432UB/TR
Microchip Technology
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 - - - - - - - - 100 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
JANSM2N3439UA
JANSM2N3439UA
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 350 V
JANKCAR2N3635
JANKCAR2N3635
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 140 V
JANSP2N3440UA
JANSP2N3440UA
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 250 V
JANKCCR2N5153
JANKCCR2N5153
Microchip Technology
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 - - - - - - - - 2 A 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 500mA, 5A 80 V
JANHCC2N6193
JANHCC2N6193
Microchip Technology
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - - - - Through Hole -65°C ~ 200°C 1 W - - TO-205AD (TO-39) - PNP 1.2V @ 500mA, 5A 100 V
JAN2N3499U4/TR
JAN2N3499U4/TR
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 600mV @ 30mA, 300mA 100 V
JANS2N3440UA/TR
JANS2N3440UA/TR
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 250 V
2C5664
2C5664
Microchip Technology
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JAN2N2605UB/TR
JAN2N2605UB/TR
Microchip Technology
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 - - - - - - - - 30 mA 150 @ 500µA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP 300mV @ 500µA, 10mA 60 V
JANTX2N3500U4/TR
JANTX2N3500U4/TR
Microchip Technology
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 400mV @ 15mA, 150mA 150 V
JANS2N4033UA/TR
JANS2N4033UA/TR
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UA - PNP 1V @ 100mA, 1A 80 V
JANKCDF2N5152
JANKCDF2N5152
Microchip Technology
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 - - - - - - - - 2 A 30 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 1.5V @ 500mA, 5A 80 V
JANKCD2N5154
JANKCD2N5154
Microchip Technology
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 - - - - - - - - 2 A 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 1.5V @ 500mA, 5A 80 V
JANHCA2N3637
JANHCA2N3637
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JAN2N3500U4/TR
JAN2N3500U4/TR
Microchip Technology
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 400mV @ 15mA, 150mA 150 V
JAN2N3250AUB/TR
JAN2N3250AUB/TR
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - PNP 500mV @ 5mA, 50mA 60 V
JANTX2N2604UB/TR
JANTX2N2604UB/TR
Microchip Technology
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 - - - - - - - - 30 mA 60 @ 500µA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP 300mV @ 500µA, 10mA 60 V
JANSP2N3439UA
JANSP2N3439UA
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 350 V
JANKCBR2N3700
JANKCBR2N3700
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 500mV @ 50mA, 500mA 80 V
JANKCBR2N2222A
JANKCBR2N2222A
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 - NPN 1V @ 50mA, 500mA 50 V
JANSR2N3636UB/TR
JANSR2N3636UB/TR
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
JANKCAR2N3636
JANKCAR2N3636
Microchip Technology
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 - - - - - - - - 1 A 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JANS2N5416UA/TR
JANS2N5416UA/TR
Microchip Technology
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 - - - - - - - - 1 A 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 750 mW - - UA - PNP 2V @ 5mA, 50mA 300 V
JANSL2N3439UA
JANSL2N3439UA
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 350 V
JANSM2N3440UA
JANSM2N3440UA
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 250 V
JANKCDR2N5154
JANKCDR2N5154
Microchip Technology
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 - - - - - - - - 2 A 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 1.5V @ 500mA, 5A 80 V
JAN2N3501U4/TR
JAN2N3501U4/TR
Microchip Technology
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 - - - - - - - - 300 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 400mV @ 15mA, 150mA 150 V
JANKCA2N3636
JANKCA2N3636
Microchip Technology
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 - - - - - - - - 1 A 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JANKCAR2N2369A
JANKCAR2N2369A
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C 360 mW - - TO-18 - NPN 450mV @ 10mA, 100mA 15 V
JANS2N930UB/TR
JANS2N930UB/TR
Microchip Technology
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 - - - - - - - - 30 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 45 V
JANKCBH2N2222A
JANKCBH2N2222A
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 - NPN 1V @ 50mA, 500mA 50 V
JANKCAF2N2484
JANKCAF2N2484
Microchip Technology
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 360 mW - - TO-18 (TO-206AA) - NPN 300mV @ 100µA, 1mA 60 V
JANKCDR2N5152
JANKCDR2N5152
Microchip Technology
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 - - - - - - - - 2 A 30 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 1.5V @ 500mA, 5A 80 V
Showing 7151-7200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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