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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SB1462J0L
2SB1462J0L
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - PNP 500mV @ 10mA, 100mA 50 V
2SB158900L
2SB158900L
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 - - - - - - - - 1.5 A 200 @ 400mA, 1V - - - 190MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - PNP 350mV @ 25mA, 1A 10 V
2SB09560RL
2SB09560RL
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 - - - - - - - - 1 A 130 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - PNP 500mV @ 50mA, 1A 20 V
2SD2137APA
2SD2137APA
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - NPN 1.2V @ 375mA, 3A 80 V
2SD2138AQA
2SD2138AQA
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 - - - - - - - - 2 A 2000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 15 W - - MT-4-A1 - NPN - Darlington 2.5V @ 8mA, 2A 80 V
2SD21390PA
2SD21390PA
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 - - - - - - - - 3 A 800 @ 500mA, 4V - - - 50MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - NPN 1V @ 50mA, 2A 60 V
2SD22100RL
2SD22100RL
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - NPN 400mV @ 20mA, 500mA 20 V
2SD2216J0L
2SD2216J0L
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 - - - - - - - - 100 mA 180 @ 2mA, 10V - - - 150MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - NPN 300mV @ 10mA, 100mA 50 V
2SD244100L
2SD244100L
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 - - - - - - - - 1.5 A 200 @ 400mA, 1V - - - 190MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - NPN 250mV @ 25mA, 1A 10 V
2SD0874A0L
2SD0874A0L
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 - - - - - - - - 1 A 85 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - NPN 400mV @ 50mA, 500mA 50 V
2SD0968A0L
2SD0968A0L
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - NPN 600mV @ 50mA, 500mA 120 V
2SD23750P
2SD23750P
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 - - - - - - - - 3 A 800 @ 500mA, 4V - - - 50MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 1V @ 50mA, 2A 60 V
MMST3904-7
MMST3904-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 300mV @ 5mA, 50mA 40 V
MMST3906-7
MMST3906-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 300mV @ 5mA, 50mA 40 V
MMST4401-7
MMST4401-7
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 750mV @ 50mA, 500mA 40 V
MMST2222A-7
MMST2222A-7
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Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 1V @ 50mA, 500mA 40 V
2SA1309A0A
2SA1309A0A
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - PNP 300mV @ 5mA, 50mA 50 V
2SB1030A
2SB1030A
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - PNP 600mV @ 30mA, 300mA 50 V
2SC3311A0A
2SC3311A0A
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SD1423A
2SD1423A
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 600mV @ 30mA, 300mA 50 V
2SD145000A
2SD145000A
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
MMBT4124-7
MMBT4124-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 25 V
MMBTA42-7
MMBTA42-7
Diodes Incorporated
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 500mV @ 2mA, 20mA 300 V
MMBTA63-7
MMBTA63-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MMBTA92-7
MMBTA92-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 500mV @ 2mA, 20mA 300 V
MMST5401-7
MMST5401-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 500mV @ 5mA, 50mA 150 V
MMST6427-7
MMST6427-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
MMSTA05-7
MMSTA05-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 250mV @ 10mA, 100mA 60 V
MMSTA06-7
MMSTA06-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 250mV @ 10mA, 100mA 80 V
MMSTA42-7
MMSTA42-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 500mV @ 2mA, 20mA 300 V
MMSTA92-7
MMSTA92-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 500mV @ 2mA, 20mA 300 V
2SC57390P
2SC57390P
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 - - - - - - - - 3 A 160 @ 1A, 4V - - - 180MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 375mA, 3A 60 V
2SA201000L
2SA201000L
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 - - - - - - - - 2.5 A 200 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - PNP 320mV @ 50mA, 2.5A 15 V
2SA204600L
2SA204600L
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 - - - - - - - - 1.5 A 160 @ 100mA, 2V - - - 170MHz - - Surface Mount 150°C (TJ) 400 mW - - Mini3-G1 - PNP 150mV @ 25mA, 500mA 20 V
2SB167900L
2SB167900L
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 - - - - - - - - 500 mA 130 @ 500mA, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 300mV @ 8mA, 400mA 10 V
2SC559200L
2SC559200L
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 - - - - - - - - 2.5 A 400 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - NPN 320mV @ 50mA, 2.5A 15 V
2SC57250SL
2SC57250SL
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - NPN 280mV @ 30mA, 1.5A 15 V
XN09D5800L
XN09D5800L
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 - - - - - - - - 2.5 A 200 @ 100mA, 2V - - - 180MHz - - Surface Mount 125°C (TJ) 600 mW - - MINI6-G1 - PNP + Diode (Isolated) 320mV @ 50mA, 2.5A 15 V
XN09D6100L
XN09D6100L
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 - - - - - - - - 1.5 A 160 @ 100mA, 2V - - - 270MHz - - Surface Mount 125°C (TJ) 600 mW - - MINI6-G1 - PNP + Diode (Isolated) 200mV @ 15mA, 750mA 15 V
FZT558
FZT558
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 50mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 6mA, 50mA 400 V
MJE521
MJE521
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On Semiconductor
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 - - - - - - - - 4 A 40 @ 1A, 1V - - - - - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - 40 V
2SB0709AQL
2SB0709AQL
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SB0709ARL
2SB0709ARL
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SD19960TA
2SD19960TA
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 - - - - - - - - 500 mA 400 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
2SB07100QL
2SB07100QL
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 25 V
2SB07100RL
2SB07100RL
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 25 V
2SB07100SL
2SB07100SL
Panasonic Electronic Components
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 25 V
2SB0710AQL
2SB0710AQL
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB0710ARL
2SB0710ARL
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB0710ASL
2SB0710ASL
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
Showing 7201-7250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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