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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ST2310DHI
ST2310DHI
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STMicroelectronics
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 12 A 5.5 @ 7A, 5V - Through Hole 150°C (TJ) 55 W ISOWATT-218 NPN 3V @ 1.75A, 7A 600 V
ST2408HI
ST2408HI
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STMicroelectronics
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 12 A 6 @ 8A, 5V - Through Hole 150°C (TJ) 55 W ISOWATT-218 NPN 3V @ 2A, 8A 600 V
ST8812FP
ST8812FP
STMicroelectronics
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 7 A 4.5 @ 5A, 5V - Through Hole 150°C (TJ) 36 W TO-220FP NPN 3V @ 800mA, 4A 600 V
STF724
STF724
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STMicroelectronics
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 3 A 100 @ 100mA, 2V 100MHz Surface Mount - 1.4 W SOT-89-3 NPN 1.1V @ 150mA, 3A 30 V
STPSA42-AP
STPSA42-AP
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STMicroelectronics
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 500 mA 40 @ 30mA, 10V 50MHz Through Hole 150°C (TJ) 625 mW TO-92AP NPN 500mV @ 2mA, 20mA 300 V
STX112
STX112
STMicroelectronics
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 2 A 1000 @ 1A, 4V - Through Hole 150°C (TJ) 1.2 W TO-92-3 NPN - Darlington 2.5V @ 8mA, 2A 100 V
STX715
STX715
STMicroelectronics
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 1.5 A 40 @ 1A, 2V 50MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 100mA, 1A 80 V
TIP122FP
TIP122FP
STMicroelectronics
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 5 A 1000 @ 3A, 3V - Through Hole 150°C (TJ) 2 W TO-220FP NPN - Darlington 4V @ 20mA, 5A 100 V
KSA1298PYWD
KSA1298PYWD
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On Semiconductor
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 800 mA 100 @ 100mA, 1V 120MHz Surface Mount 150°C (TJ) 200 mW SOT-23-3 PNP 400mV @ 20mA, 500mA 25 V
MMBT2222AK
MMBT2222AK
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On Semiconductor
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 600 mA 100 @ 150mA, 10V 300MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 NPN 1V @ 50mA, 500mA 40 V
KSC1008RTA
KSC1008RTA
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 700 mA 40 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 400mV @ 50mA, 500mA 60 V
SS9015BBU
SS9015BBU
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 100 mA 100 @ 1mA, 5V 190MHz Through Hole 150°C (TJ) 450 mW TO-92-3 PNP 700mV @ 5mA, 100mA 45 V
KSC1815GRBU
KSC1815GRBU
On Semiconductor
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 150 mA 200 @ 2mA, 6V 80MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 250mV @ 10mA, 100mA 50 V
KSC1845ETA
KSC1845ETA
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 50 mA 400 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 300mV @ 1mA, 10mA 120 V
KSC1815YBU
KSC1815YBU
On Semiconductor
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 150 mA 120 @ 2mA, 6V 80MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 250mV @ 10mA, 100mA 50 V
SS9015CTA
SS9015CTA
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 100 mA 200 @ 1mA, 5V 190MHz Through Hole 150°C (TJ) 450 mW TO-92-3 PNP 700mV @ 5mA, 100mA 45 V
KSA708OTA
KSA708OTA
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On Semiconductor
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA708OBU
KSA708OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA708CYBU
KSA708CYBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
SS9015ABU
SS9015ABU
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 100 mA 60 @ 1mA, 5V 190MHz Through Hole 150°C (TJ) 450 mW TO-92-3 PNP 700mV @ 5mA, 100mA 45 V
KSA910YBU
KSA910YBU
On Semiconductor
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSA733CLBU
KSA733CLBU
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 150 mA 350 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSA733OBU
KSA733OBU
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 150 mA 70 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSA733LBU
KSA733LBU
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 150 mA 350 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSP6521BU
KSP6521BU
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 100 mA 300 @ 2mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 5mA, 50mA 25 V
KSP8098TF
KSP8098TF
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 10mA, 100mA 60 V
KST2484MTF
KST2484MTF
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On Semiconductor
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 50 mA 250 @ 1mA, 5V - Surface Mount - 350 mW SOT-23-3 NPN 350mV @ 100µA, 1mA 60 V
KST5089MTF
KST5089MTF
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 50 mA 400 @ 100µA, 5V 50MHz Surface Mount - 350 mW SOT-23-3 NPN 500mV @ 1mA, 10mA 25 V
KSP8098CTA
KSP8098CTA
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 10mA, 100mA 60 V
KSP8098CBU
KSP8098CBU
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 10mA, 100mA 60 V
KSP6520BU
KSP6520BU
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 100 mA 200 @ 2mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 5mA, 50mA 25 V
KSP6521NBU
KSP6521NBU
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 100 mA 300 @ 2mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 5mA, 50mA 25 V
KSP8599BU
KSP8599BU
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 100mA 80 V
KSC1675YBU
KSC1675YBU
On Semiconductor
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 50 mA 120 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSC1675CRBU
KSC1675CRBU
On Semiconductor
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 50 mA 40 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSC1675YS1TA
KSC1675YS1TA
On Semiconductor
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 50 mA 120 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSC1675OBU
KSC1675OBU
On Semiconductor
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 50 mA 70 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSC1675YTA
KSC1675YTA
On Semiconductor
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 50 mA 120 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSC388YTA
KSC388YTA
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 50 mA 20 @ 12.5mA, 12.5V 300MHz Through Hole 150°C (TJ) 300 mW TO-92-3 NPN 200mV @ 1.5mA, 15mA 25 V
KSA812OMTF
KSA812OMTF
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 100 mA 90 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 150 mW SOT-23-3 PNP 300mV @ 10mA, 100mA 50 V
KSA812GAMTF
KSA812GAMTF
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 100 mA 200 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 150 mW SOT-23-3 PNP 300mV @ 10mA, 100mA 50 V
KSC1187OTA
KSC1187OTA
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 30 mA 70 @ 2mA, 10V 700MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN - 20 V
KSC388CYBU
KSC388CYBU
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 50 mA 20 @ 12.5mA, 12.5V 300MHz Through Hole 150°C (TJ) 300 mW TO-92-3 NPN 200mV @ 1.5mA, 15mA 25 V
KSC388CTA
KSC388CTA
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 50 mA 20 @ 12.5mA, 12.5V 300MHz Through Hole 150°C (TJ) 300 mW TO-92-3 NPN 200mV @ 1.5mA, 15mA 25 V
KSC1187YTA
KSC1187YTA
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 30 mA 120 @ 2mA, 10V 700MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN - 20 V
KSD227GBU
KSD227GBU
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
KSA539YTA
KSA539YTA
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 200 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 500mV @ 15mA, 150mA 45 V
KSC815CYTA
KSC815CYTA
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 200 mA 120 @ 50mA, 1V 200MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 15mA, 150mA 45 V
KSC815COBU
KSC815COBU
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 200 mA 70 @ 50mA, 1V 200MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 15mA, 150mA 45 V
KSD227YTA
KSD227YTA
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
Showing 7201-7250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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