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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N3905TA
2N3905TA
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2N4123TA
2N4123TA
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2N4123TF
2N4123TF
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2N4123TFR
2N4123TFR
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2N4124TA
2N4124TA
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2N4124TFR
2N4124TFR
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2N4125TA
2N4125TA
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2N4125TF
2N4125TF
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2N4125TFR
2N4125TFR
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 - - - - - - - - 200 mA 50 @ 2mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 30 V
89100-06TXV
89100-06TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
2N4126TF
2N4126TF
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 25 V
2N4402TA
2N4402TA
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 - - - - - - - - 600 mA 50 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4403NLBU
2N4403NLBU
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N5087TA
2N5087TA
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 1mA, 10mA 50 V
2N5087TF
2N5087TF
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 1mA, 10mA 50 V
2N5089TA
2N5089TA
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 25 V
2N5089TF
2N5089TF
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 25 V
2N5089TFR
2N5089TFR
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 25 V
2N5401CTA
2N5401CTA
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401CYTA
2N5401CYTA
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401NLBU
2N5401NLBU
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401TF
2N5401TF
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401TFR
2N5401TFR
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5551CBU
2N5551CBU
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N5551CTA
2N5551CTA
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N6517CBU
2N6517CBU
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 - - - - - - - - 500 mA 20 @ 50mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 50mA 400 V
2N6519BU
2N6519BU
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 - - - - - - - - 500 mA 40 @ 50mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 5mA, 50mA 300 V
2N6520BU
2N6520BU
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 - - - - - - - - 500 mA 20 @ 50mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 5mA, 50mA 350 V
BC237ABU
BC237ABU
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237ATA
BC237ATA
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237BTAR
BC237BTAR
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237BTFR
BC237BTFR
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237BU
BC237BU
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237CBU
BC237CBU
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237CTA
BC237CTA
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237TF
BC237TF
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC238ATFR
BC238ATFR
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC239ATA
BC239ATA
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
90024-01TX
90024-01TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
2N4235
2N4235
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-205AD - PNP 600mV @ 100mA, 1A 60 V
90024-01TXV
90024-01TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
90024-02TX
90024-02TX
Microchip Technology
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90024-02TXV
90024-02TXV
Microchip Technology
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90024-03TX
90024-03TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
2N4916
2N4916
Central Semiconductor Corp
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 - - - - - - - - - 70 @ 10mA, 1V - - - 400MHz - - Through Hole - - - - TO-106 - PNP 300mV @ 5mA, 50mA 30 V
2N5134
2N5134
Central Semiconductor Corp
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 - - - - - - - - 400nA (ICBO) 20 @ 10mA, 1V - - - 250MHz - - Through Hole - - - - TO-106 - NPN - 10 V
2N5139
2N5139
Central Semiconductor Corp
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2N5143
2N5143
Central Semiconductor Corp
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 - - - - - - - - 50nA (ICBO) 30 @ 50mA, 1V - - - 100MHz - - Through Hole - - - - TO-105 - PNP 500mV @ 5mA, 50mA 20 V
CEN363
CEN363
Central Semiconductor Corp
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EN2222A
EN2222A
Central Semiconductor Corp
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Showing 5101-5150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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