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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC327ABU
BC327ABU
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC327BU
BC327BU
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BC32816BU
BC32816BU
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BC32825BU
BC32825BU
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 25 V
BC32840BU
BC32840BU
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 25 V
BC33716TAR
BC33716TAR
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BC33840TA
BC33840TA
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC547ABU
BC547ABU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC547CTF
BC547CTF
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC548ABU
BC548ABU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548ATF
BC548ATF
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548CTF
BC548CTF
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549ABU
BC549ABU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549ATA
BC549ATA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549CTF
BC549CTF
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC550ATA
BC550ATA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC557BTAR
BC557BTAR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC558ATA
BC558ATA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC558BTF
BC558BTF
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC558CBU
BC558CBU
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC559ABU
BC559ABU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC559ATA
BC559ATA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC559BBU
BC559BBU
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC560ATA
BC560ATA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BD538J
BD538J
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 - - - - - - - - 8 A 30 @ 2A, 2V - - - 12MHz - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - PNP 800mV @ 600mA, 6A 80 V
BC560BBU
BC560BBU
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC636TF
BC636TF
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 45 V
BC640BU
BC640BU
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 80 V
BC81740NMMTF
BC81740NMMTF
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC849AMTF
BC849AMTF
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 30 V
BC849CMTF
BC849CMTF
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 30 V
BC859CMTF
BC859CMTF
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 30 V
BC860AMTF
BC860AMTF
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 45 V
BCW61CMTF
BCW61CMTF
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - - - - Surface Mount - 350 mW - - SOT-23-3 - PNP 550mV @ 1.25mA, 50mA 32 V
90024-03TXV
90024-03TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
BD13510S
BD13510S
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - NPN 500mV @ 50mA, 500mA 45 V
BD13816S
BD13816S
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 - - - - - - - - 1.5 A 100 @ 150mA, 2V - - - - - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - PNP 500mV @ 50mA, 500mA 60 V
BD1396S
BD1396S
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - NPN 500mV @ 50mA, 500mA 80 V
BD157STU
BD157STU
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole - 20 W - - TO-126-3 - NPN - 250 V
BD235STU
BD235STU
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 - - - - - - - - 2 A 25 @ 1A, 2V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-126-3 - NPN 600mV @ 100mA, 1A 60 V
BD238S
BD238S
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 - - - - - - - - 2 A 25 @ 1A, 2V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-126-3 - PNP 600mV @ 100mA, 1A 80 V
BD238STU
BD238STU
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 - - - - - - - - 2 A 25 @ 1A, 2V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-126-3 - PNP 600mV @ 100mA, 1A 80 V
BD240TU
BD240TU
On Semiconductor
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 - - - - - - - - 2 A 15 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 200mA, 1A 45 V
BD241ATU
BD241ATU
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1.2V @ 600mA, 3A 60 V
BD442S
BD442S
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - 3MHz - - Through Hole 150°C (TJ) 36 W - - TO-126-3 - PNP 800mV @ 200mA, 2A 80 V
BD682STU
BD682STU
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole 150°C (TJ) 14 W - - TO-126-3 - PNP - Darlington 2.5V @ 30mA, 1.5A 100 V
BDW23TU
BDW23TU
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 - - - - - - - - 6 A 750 @ 2A, 3V - - - - - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 3V @ 60mA, 6A 45 V
BDX33CTU
BDX33CTU
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220-3 - NPN - Darlington 2.5V @ 6mA, 3A 100 V
BDX34BTU
BDX34BTU
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220-3 - PNP 2.5V @ 6mA, 3A 80 V
BDX54BTU
BDX54BTU
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 60 W - - TO-220-3 - PNP - Darlington 2V @ 12mA, 3A 80 V
Showing 5251-5300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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