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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
EN2907A
EN2907A
Central Semiconductor Corp
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TEC301-303
TEC301-303
Central Semiconductor Corp
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TEC304
TEC304
Central Semiconductor Corp
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KSE182PWD
KSE182PWD
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On Semiconductor
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 500MHz - - - 150°C (TJ) 1.5 W - - - - NPN 1.7V @ 600mA, 3A 80 V
S1JVNJD2873T4G
S1JVNJD2873T4G
On Semiconductor
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount -65°C ~ 175°C (TJ) 1.68 W - - DPAK - NPN 300mV @ 50mA, 1A 50 V
2N5401-AP
2N5401-AP
Micro Commercial
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-92 - PNP 500mV @ 5mA, 50mA 150 V
2SA1201-Y-TP
2SA1201-Y-TP
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Micro Commercial
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - SOT-89 - PNP 1V @ 50mA, 500mA 120 V
MMBT2907A-13
MMBT2907A-13
Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 1.6V @ 50mA, 500mA 60 V
MMBT3904-13
MMBT3904-13
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 40 V
MMBT3904T-13
MMBT3904T-13
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 300mV @ 5mA, 50mA 40 V
MMBT3906-13
MMBT3906-13
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
MMBT3906T-13
MMBT3906T-13
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 400mV @ 5mA, 50mA 40 V
2N2221A PBFREE
2N2221A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - 250MHz - - Through Hole -65°C ~ 200°C (TJ) 1.8 W - - TO-18 - NPN 1V @ 50mA, 500mA 40 V
BC546A A1G
BC546A A1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
2N2906 PBFREE
2N2906 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - 200MHz - - Through Hole -65°C ~ 200°C (TJ) 1.8 W - - TO-18 - PNP 1.6V @ 50mA, 500mA 40 V
2N2906A PBFREE
2N2906A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - 200MHz - - Through Hole -65°C ~ 200°C (TJ) 1.8 W - - TO-18 - PNP 1.6V @ 50mA, 500mA 60 V
2N4870
2N4870
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Central Semiconductor Corp
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 - - - - - - - - - - - - - - - - Through Hole -65°C ~ 125°C (TJ) 300 mW - - TO-92 - PNP - -
2N6488 PBFREE
2N6488 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 15 A 25 @ 1A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 75 W - - TO-220-3 - NPN 3.5V @ 5A, 15A 80 V
BU406 PBFREE
BU406 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 7 A - - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 60 W - - TO-220-3 - NPN 1V @ 500mA, 5A 200 V
BU806 PBFREE
BU806 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 8 A - - - - - - - Through Hole -65°C ~ 150°C (TJ) 60 W - - TO-220-3 - NPN 1.5V @ 50mA, 5A 400 V
D44H11 PBFREE
D44H11 PBFREE
Central Semiconductor Corp
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TIP30 PBFREE
TIP30 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 200mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 125mA, 1A 40 V
TIP30A PBFREE
TIP30A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 200mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 125mA, 1A 60 V
TIP30C PBFREE
TIP30C PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 200mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 125mA, 1A 100 V
2N1131 PBFREE
2N1131 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 20 @ 150mA, 10V - - - 50MHz - - Through Hole -65°C ~ 200°C (TJ) 2 W - - TO-39 - PNP 1.5V @ 15mA, 150mA 50 V
2N2368 PBFREE
2N2368 PBFREE
Download Datasheet for 2N2368 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 400mA 20 @ 10mA, 1V - - - 400MHz - - Through Hole - - - - TO-18 - NPN - -
2N3701
2N3701
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Central Semiconductor Corp
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 80MHz - - Through Hole -65°C ~ 200°C (TJ) 1.8 W - - TO-18 - NPN 500mV @ 50mA, 500mA 80 V
2N915 PBFREE
2N915 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - - 50 @ 10mA, 10V - - - 250MHz - - Through Hole - - - - TO-18 - NPN - -
BCX22 PBFREE
BCX22 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 100nA (ICBO) 40 @ 200mA, 1V - - - 50MHz - - Through Hole - - - - TO-18 - NPN - 125 V
BCY79-VIII PBFREE
BCY79-VIII PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 100MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-18 - PNP 800mV @ 2.5mA, 100mA 45 V
TIP30B PBFREE
TIP30B PBFREE
Download Datasheet for TIP30B PBFREE
Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 200mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 125mA, 1A 80 V
IMIC41V07X6SA1
IMIC41V07X6SA1
Infineon Technologies
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IMIC41V01X6SA2
IMIC41V01X6SA2
Infineon Technologies
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TSA1765CW RPG
TSA1765CW RPG
Taiwan Semiconductor
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 - - - - - - - - 150 mA 150 @ 1mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 10mA, 50mA 560 V
TSC5302DCP ROG
TSC5302DCP ROG
Taiwan Semiconductor
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 - - - - - - - - 2 A 10 @ 400mA, 5V - - - - - - Surface Mount 150°C (TJ) 25 W - - TO-252, (D-Pak) - NPN 1.5V @ 250mA, 1A 400 V
TSC5303DCP ROG
TSC5303DCP ROG
Taiwan Semiconductor
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 - - - - - - - - 3 A 15 @ 1A, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 30 W - - TO-252, (D-Pak) - NPN 700mV @ 100mA, 400mA 400 V
TSC5304EDCP ROG
TSC5304EDCP ROG
Taiwan Semiconductor
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 - - - - - - - - 4 A 17 @ 1A, 5V - - - - - - Surface Mount 150°C (TJ) 35 W - - TO-252, (D-Pak) - NPN 1.5V @ 500mA, 2.5A 400 V
TSC5802DCP ROG
TSC5802DCP ROG
Taiwan Semiconductor
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 - - - - - - - - 2.5 A 50 @ 100mA, 5V - - - - - - Surface Mount 150°C (TJ) 30 W - - TO-252, (D-Pak) - NPN 3V @ 600mA, 2A 450 V
TSC5804DCP ROG
TSC5804DCP ROG
Taiwan Semiconductor
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 - - - - - - - - 5 A 25 @ 200mA, 3V - - - - - - Surface Mount 150°C (TJ) 45 W - - TO-252, (D-Pak) - NPN 2V @ 1A, 3.5A 450 V
TSA1036CX RFG
TSA1036CX RFG
Taiwan Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 225 mW - - SOT-23 - PNP 400mV @ 15mA, 150mA 60 V
BC337-16 A1G
BC337-16 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC337-25 A1G
BC337-25 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC337-40 A1G
BC337-40 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-16 A1G
BC338-16 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-25 A1G
BC338-25 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-40 A1G
BC338-40 A1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA - - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC546B A1G
BC546B A1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC546C A1G
BC546C A1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC547A A1G
BC547A A1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC547B A1G
BC547B A1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
Showing 5151-5200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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