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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SD20670RA
2SD20670RA
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 - - - - - - - - 2 A 8000 @ 1A, 10V - - - - - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN - Darlington 1.5V @ 1mA, 1A 100 V
2SD2138APA
2SD2138APA
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Panasonic Electronic Components
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 - - - - - - - - 2 A 4000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 15 W - - MT-4-A1 - NPN - Darlington 2.5V @ 8mA, 2A 80 V
2SD21790RA
2SD21790RA
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 - - - - - - - - 5 A 120 @ 500mA, 2V - - - 80MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 300mV @ 100mA, 2A 50 V
2SD21840RA
2SD21840RA
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 - - - - - - - - 1 A 120 @ 100mA, 2V - - - 90MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 300mV @ 25mA, 500mA 150 V
2SD22250RA
2SD22250RA
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 1V @ 30mA, 300mA 120 V
2SD2240JRL
2SD2240JRL
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 130 @ 10mA, 5V - - - 150MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - NPN 1V @ 3mA, 30mA 150 V
2SD22420PA
2SD22420PA
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 - - - - - - - - 4 A 4000 @ 3A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - NPN - Darlington 4V @ 20mA, 5A 60 V
2SD22580RA
2SD22580RA
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 - - - - - - - - 1 A 8000 @ 1A, 10V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN - Darlington 1.8V @ 1mA, 1A 50 V
2SD225900A
2SD225900A
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 - - - - - - - - 700 mA 1000 @ 150mA, 10V - - - 55MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 400mV @ 50mA, 500mA 20 V
2SD23210RA
2SD23210RA
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 - - - - - - - - 5 A 340 @ 500mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 400 mW - - NS-B1 - NPN 1V @ 100mA, 3A 20 V
2SD2345JSL
2SD2345JSL
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 - - - - - - - - 50 mA 600 @ 2mA, 10V - - - 120MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - NPN 200mV @ 1mA, 10mA 40 V
2SD235800A
2SD235800A
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 150mV @ 20mA, 500mA 10 V
2SC3380AS04UR-E
2SC3380AS04UR-E
Renesas
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2SD250400A
2SD250400A
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 - - - - - - - - 5 A 300 @ 500mA, 2V - - - 170MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - NPN 500mV @ 100mA, 3A 10 V
2SD256500A
2SD256500A
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 - - - - - - - - 500 mA 30 @ 30mA, 5V - - - 30MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 1.5V @ 50mA, 250mA 400 V
2SD25730QA
2SD25730QA
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 - - - - - - - - 3 A 800 @ 500mA, 4V - - - 50MHz - - Through Hole 150°C (TJ) 1.5 W - - MT-3-A1 - NPN 1V @ 50mA, 2A 60 V
2N3416_D26Z
2N3416_D26Z
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 - - - - - - - - 500 mA 75 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 50 V
2N3904_J05Z
2N3904_J05Z
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 40 V
2N4125_S00Z
2N4125_S00Z
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 - - - - - - - - 200 mA 50 @ 2mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 30 V
2N4403_D11Z
2N4403_D11Z
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N5088_D81Z
2N5088_D81Z
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 - - - - - - - - 100 mA 300 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 30 V
2N5088_J61Z
2N5088_J61Z
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 - - - - - - - - 100 mA 300 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 30 V
2N5401TA
2N5401TA
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5551CYTA
2N5551CYTA
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N6426_D26Z
2N6426_D26Z
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 - - - - - - - - 1.2 A 20000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
2N7053_D74Z
2N7053_D74Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
BC182L_D27Z
BC182L_D27Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC32725TFR
BC32725TFR
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC32816TA
BC32816TA
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 25 V
BC546BBU
BC546BBU
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
2SD1694(1)-AZ
2SD1694(1)-AZ
Renesas
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BC548A
BC548A
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC557BTFR
BC557BTFR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC558
BC558
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC635
BC635
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 45 V
BC849BMTF
BC849BMTF
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 30 V
BCX799_D26Z
BCX799_D26Z
On Semiconductor
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 - - - - - - - - 500 mA 80 @ 10mA, 1V - - - - - - Through Hole - 625 mW - - TO-92-3 - PNP 600mV @ 2.5mA, 100mA 45 V
BD242CTU
BD242CTU
On Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - PNP 1.2V @ 600mA, 3A 100 V
MJD41CTFCTF
MJD41CTFCTF
On Semiconductor
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2N3417
2N3417
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On Semiconductor
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 50 V
BC212LB
BC212LB
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On Semiconductor
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 - - - - - - - - 100 mA 60 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BCX19_D87Z
BCX19_D87Z
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 620mV @ 50mA, 500mA 45 V
BSR14_D87Z
BSR14_D87Z
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 1V @ 50mA, 500mA 40 V
BSR17A_D87Z
BSR17A_D87Z
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 40 V
BSV52_D87Z
BSV52_D87Z
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 - - - - - - - - 200 mA 40 @ 10mA, 1V - - - 400MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 - NPN 400mV @ 5mA, 50mA 12 V
BU508AFTBTU
BU508AFTBTU
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 - - - - - - - - 5 A 2.25 @ 4.5A, 5V - - - - - - Through Hole 150°C (TJ) 60 W - - TO-3PF - NPN 1V @ 2A, 4.5A 700 V
BUT11FTU
BUT11FTU
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 - - - - - - - - 5 A - - - - - - - Through Hole 150°C (TJ) 100 W - - TO-220F-3 - NPN 1.5V @ 600mA, 3A 400 V
2N3904CBU
2N3904CBU
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 40 V
89100-06TX
89100-06TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
2N3904NLBU
2N3904NLBU
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 40 V
Showing 5051-5100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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