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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC3979A
2SC3979A
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Panasonic Electronic Components
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 - - - - - - - - 3 A 6 @ 800mA, 5V - - - 10MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.5V @ 160mA, 800mA 800 V
89100-05TX
89100-05TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
2SC4004
2SC4004
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 - - - - - - - - 1 A 3 @ 500mA, 5V - - - 4MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.5V @ 40mA, 200mA 800 V
2SC4559
2SC4559
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 - - - - - - - - 7 A 8 @ 3A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 600mA, 3A 400 V
2SC4960
2SC4960
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 - - - - - - - - 1 A 3 @ 500mA, 5V - - - 4MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 1.5V @ 40mA, 200mA 800 V
2SC59540Q
2SC59540Q
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 - - - - - - - - 3 A 500 @ 500mA, 4V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 600mV @ 20mA, 1A 60 V
2SD0946AR
2SD0946AR
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 - - - - - - - - 1 A 8000 @ 1A, 10V - - - 150MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - NPN - Darlington 1.8V @ 1mA, 1A 50 V
2SD12630P
2SD12630P
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 - - - - - - - - 750 mA 120 @ 300mA, 10V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 200mA, 1A 250 V
2SD1263AQ
2SD1263AQ
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 - - - - - - - - 750 mA 70 @ 300mA, 10V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 200mA, 1A 300 V
2SD12660P
2SD12660P
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.2V @ 375mA, 3A 60 V
2SD1266AP
2SD1266AP
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.2V @ 375mA, 3A 80 V
2SC3446M
2SC3446M
On Semiconductor
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2SD12670P
2SD12670P
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 - - - - - - - - 4 A 120 @ 1A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.5V @ 400mA, 4A 60 V
2SD12680P
2SD12680P
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 - - - - - - - - 3 A 130 @ 500mA, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 100mA, 2A 80 V
2SD12690P
2SD12690P
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 - - - - - - - - 4 A 130 @ 1A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 150mA, 3A 80 V
2SD12700P
2SD12700P
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 - - - - - - - - 5 A 130 @ 2A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 200mA, 4A 80 V
2SD12710P
2SD12710P
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 - - - - - - - - 7 A 130 @ 3A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 250mA, 5A 80 V
2SD12720P
2SD12720P
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 - - - - - - - - 2.5 A 800 @ 200mA, 4V - - - 25MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 20mA, 500mA 150 V
2SD12750P
2SD12750P
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 - - - - - - - - 2 A 4000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 2.5V @ 8mA, 2A 60 V
2SD12770P
2SD12770P
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 - - - - - - - - 8 A 4000 @ 4A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 1.5V @ 8mA, 4A 60 V
2SD1445AQ
2SD1445AQ
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 - - - - - - - - 10 A 90 @ 3A, 2V - - - 120MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 600mV @ 330mA, 10A 40 V
2SD14850P
2SD14850P
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 - - - - - - - - 5 A 100 @ 1A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 2V @ 300mA, 3A 100 V
2SC1623B-T1B-AT
2SC1623B-T1B-AT
Renesas
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
2SD16330P
2SD16330P
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 - - - - - - - - 5 A 5000 @ 3A, 3V - - - 15MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 1.5V @ 3mA, 3A 100 V
2SD17050P
2SD17050P
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 - - - - - - - - 10 A 130 @ 3A, 2V - - - 20MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 1.5V @ 1A, 10A 80 V
2SD17070P
2SD17070P
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 - - - - - - - - 20 A 130 @ 3A, 2V - - - 20MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 1.5V @ 2A, 20A 80 V
2SD1773
2SD1773
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 - - - - - - - - 8 A 1000 @ 4A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 3V @ 80mA, 8A 120 V
2SD20640S
2SD20640S
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 - - - - - - - - 6 A 80 @ 1A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 2V @ 400mA, 4A 120 V
2SD2420AP
2SD2420AP
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 - - - - - - - - 4 A 4000 @ 3A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN - Darlington 4V @ 20mA, 5A 80 V
2SA07200RA
2SA07200RA
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-B1 - PNP 600mV @ 30mA, 300mA 50 V
2SA0720ARA
2SA0720ARA
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-B1 - PNP 600mV @ 30mA, 300mA 70 V
2SA10180RA
2SA10180RA
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 - - - - - - - - 70 mA 100 @ 5mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - PNP 1.5V @ 5mA, 50mA 200 V
2SA10340SL
2SA10340SL
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 - - - - - - - - 50 mA 260 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 10mA, 100mA 35 V
2SA10350SL
2SA10350SL
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 - - - - - - - - 50 mA 260 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 10mA, 100mA 55 V
2SA11230RA
2SA11230RA
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 - - - - - - - - 50 mA 130 @ 10mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - PNP 1V @ 3mA, 30mA 150 V
2SA11270RA
2SA11270RA
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-B1 - PNP 600mV @ 10mA, 100mA 55 V
2SA17390RL
2SA17390RL
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 - - - - - - - - 50 mA 90 @ 10mA, 1V - - - 1.5GHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 200mV @ 1mA, 10mA 15 V
2SA17480RL
2SA17480RL
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 - - - - - - - - 50 mA 250 @ 2mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 300mV @ 1mA, 10mA 50 V
2SA17670QA
2SA17670QA
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 - - - - - - - - 70 mA 60 @ 5mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - PNP 600mV @ 1mA, 10mA 300 V
2SA1790JCL
2SA1790JCL
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 - - - - - - - - 30 mA 110 @ 1mA, 10V - - - 300MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - PNP 100mV @ 1mA, 10mA 20 V
2SA1791JRL
2SA1791JRL
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 - - - - - - - - 50 mA 250 @ 2mA, 10V - - - 250MHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - PNP 300mV @ 1mA, 10mA 50 V
2SA1806JRL
2SA1806JRL
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 - - - - - - - - 50 mA 90 @ 10mA, 1V - - - 1.5GHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - PNP 200mV @ 1mA, 10mA 15 V
2SA20090SL
2SA20090SL
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 - - - - - - - - 20 mA 260 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 600mV @ 2mA, 20mA 120 V
2SA207900A
2SA207900A
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 - - - - - - - - 100 mA 180 @ 2mA, 10V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - ML3-N2 - PNP 500mV @ 10mA, 100mA 45 V
2SA216200L
2SA216200L
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 200MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F1 - PNP 250mV @ 10mA, 200mA 12 V
2SB06210RA
2SB06210RA
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - PNP 400mV @ 50mA, 500mA 25 V
2SB0621ARA
2SB0621ARA
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - PNP 400mV @ 50mA, 500mA 50 V
2SB07660RL
2SB07660RL
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - PNP 400mV @ 50mA, 500mA 25 V
2SB07740RA
2SB07740RA
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-B1 - PNP 500mV @ 10mA, 100mA 25 V
2SB07790RL
2SB07790RL
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 - - - - - - - - 500 mA 130 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 400mV @ 50mA, 500mA 20 V
Showing 4951-5000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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