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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA05-AP
MPSA05-AP
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Micro Commercial
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 60 V
2N4401-AP
2N4401-AP
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Micro Commercial
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 - - - - - - - - - 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 600 mW - - TO-92 - NPN 750mV @ 50mA, 500mA 40 V
BC857BR TR PBFREE
BC857BR TR PBFREE
Download Datasheet for BC857BR TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC858BLT3G
BC858BLT3G
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On Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 650mV @ 5mA, 100mA 30 V
2SC5232BTE85LF
2SC5232BTE85LF
Toshiba
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 - - - - - - - - 500 mA 500 @ 10mA, 2V - - - 130MHz - - Surface Mount 125°C (TJ) 150 mW - - SC-59 - NPN 250mV @ 10mA, 200mA 12 V
2DD1766R-13
2DD1766R-13
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Diodes Incorporated
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 - - - - - - - - 2 A 180 @ 500mA, 3V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 800mV @ 200mA, 2A 32 V
BC858B,235
BC858B,235
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 650mV @ 5mA, 100mA 30 V
BC847B-TP
BC847B-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 45 V
BC807-40LVL
BC807-40LVL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 700mV @ 50mA, 500mA 45 V
STK13003
STK13003
STMicroelectronics
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 - - - - - - - - 1.5 A 5 @ 1A, 2V - - - - - - Through Hole 150°C (TJ) 40 W - - SOT-82-3 - NPN 1.5V @ 500mA, 1.5A 400 V
BC807-40LR
BC807-40LR
Download Datasheet for BC807-40LR
Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 700mV @ 50mA, 500mA 45 V
STX13003G-AP
STX13003G-AP
STMicroelectronics
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 - - - - - - - - 1 A 8 @ 500mA, 2V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-92AP - NPN 1.5V @ 500mA, 1.5A 400 V
FCX2016TC
FCX2016TC
Diodes Incorporated
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 - - - - - - - - - - - - - - - - Surface Mount - - - - SOT-89-3 - PNP - 40 V
2SA1162-O,LF
2SA1162-O,LF
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Toshiba
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 150 mW - - S-Mini - PNP 300mV @ 10mA, 100mA 50 V
STBV45G-AP
STBV45G-AP
STMicroelectronics
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 - - - - - - - - 750 mA 5 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 950 mW - - TO-92AP - NPN 1.5V @ 135mA, 400mA 400 V
STBV45-AP
STBV45-AP
STMicroelectronics
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 - - - - - - - - 750 mA 5 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 950 mW - - TO-92AP - NPN 1.5V @ 135mA, 400mA 400 V
BCW66FR
BCW66FR
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Nexperia USA Inc.
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 450mV @ 50mA, 500mA 45 V
MMBT2222AHE3-TP
MMBT2222AHE3-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 1V @ 50mA, 500mA 40 V
MMBT2907AHE3-TP
MMBT2907AHE3-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 1.6V @ 50mA, 500mA 60 V
2SC4116-BL,LF
2SC4116-BL,LF
Download Datasheet for 2SC4116-BL,LF
Toshiba
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 - - - - - - - - 150 mA 350 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - SC-70 - NPN 250mV @ 10mA, 100mA 50 V
ZXTS1000E6TC
ZXTS1000E6TC
Download Datasheet for ZXTS1000E6TC
Diodes Incorporated
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 - - - - - - - - 1.25 A 200 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 885 mW - - SOT-23-6 - PNP + Diode (Isolated) 240mV @ 100mA, 1.25A 12 V
2PB709ASL,235
2PB709ASL,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - SOT-883 - PNP 500mV @ 10mA, 100mA 45 V
JANTX2N3439U4
JANTX2N3439U4
Microchip Technology
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
2PB709ASL,215
2PB709ASL,215
Nexperia USA Inc.
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 500mV @ 10mA, 100mA 45 V
BC848BHZGT116
BC848BHZGT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 600mV @ 5mA, 100mA 30 V
2SA1955FVATPL3Z
2SA1955FVATPL3Z
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Toshiba
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 - - - - - - - - 400 mA 300 @ 10mA, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 100 mW - - CST3 - PNP 250mV @ 10mA, 200mA 12 V
BCW68GVL
BCW68GVL
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Nexperia USA Inc.
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 450mV @ 50mA, 500mA 45 V
MMBT5550-TP
MMBT5550-TP
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Micro Commercial
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - - - - Surface Mount -55°C ~ 150°C 225 mW - - SOT-23 - NPN 250mV @ 5mA, 50mA 140 V
MSB92T1G
MSB92T1G
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On Semiconductor
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 - - - - - - - - 150 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 150 mW - - SC-59 - PNP 500mV @ 2mA, 20mA 300 V
ZXTP2012ASTOA
ZXTP2012ASTOA
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Diodes Incorporated
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 - - - - - - - - 3.5 A 100 @ 1A, 1V - - - 120MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 210mV @ 400mA, 4A 60 V
MMBT5551M3T5G
MMBT5551M3T5G
Download Datasheet for MMBT5551M3T5G
On Semiconductor
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 - - - - - - - - 60 mA 80 @ 10mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 265 mW - - SOT-723 - NPN 200mV @ 5mA, 50mA 160 V
MMBT5551LT3G
MMBT5551LT3G
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On Semiconductor
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 200mV @ 5mA, 50mA 160 V
2SC2712-Y,LF
2SC2712-Y,LF
Download Datasheet for 2SC2712-Y,LF
Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 150 mW - - S-Mini - NPN 250mV @ 10mA, 100mA 50 V
2SAR522UBTL
2SAR522UBTL
ROHM Semiconductor
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 - - - - - - - - 200 mA 120 @ 1mA, 2V - - - 350MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3F - PNP 300mV @ 10mA, 100mA 20 V
BC857BHE3-TP
BC857BHE3-TP
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Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC857AW-7-F
BC857AW-7-F
Download Datasheet for BC857AW-7-F
Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 45 V
BC817-25HE3-TP
BC817-25HE3-TP
Micro Commercial
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
2SC2712-BL,LF
2SC2712-BL,LF
Download Datasheet for 2SC2712-BL,LF
Toshiba
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 150 mW - - S-Mini - NPN 250mV @ 10mA, 100mA 50 V
BC856A-TP
BC856A-TP
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Micro Commercial
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 65 V
BC858C-7-F
BC858C-7-F
Download Datasheet for BC858C-7-F
Diodes Incorporated
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 30 V
BC848B-TP
BC848B-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 30 V
BC816-25VL
BC816-25VL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
ZXT13N15DE6TC
ZXT13N15DE6TC
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Diodes Incorporated
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 - - - - - - - - 5 A 300 @ 1A, 2V - - - 72MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-23-6 - NPN 200mV @ 100mA, 5A 15 V
BCX70H,235
BCX70H,235
Download Datasheet for BCX70H,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 550mV @ 1.25mA, 50mA 45 V
BC857BWQ-13-F
BC857BWQ-13-F
Download Datasheet for BC857BWQ-13-F
Diodes Incorporated
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 1mA, 10mA 120 V
MMBT4403HE3-TP
MMBT4403HE3-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 750mV @ 50mA, 500mA 40 V
2DC4617Q-7-F
2DC4617Q-7-F
Download Datasheet for 2DC4617Q-7-F
Diodes Incorporated
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 400mV @ 5mA, 50mA 50 V
2SC4081U3T106S
2SC4081U3T106S
ROHM Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 180MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 400mV @ 5mA, 50mA 50 V
JANTXV2N3439U4
JANTXV2N3439U4
Microchip Technology
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
BC857AT-7-F
BC857AT-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
Showing 4801-4850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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