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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBTA06-AU_R1_000A1
MMBTA06-AU_R1_000A1
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PANJIT
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 NPN 250mV @ 10mA, 100mA 80 V
MMBTA44
MMBTA44
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 200 mA 50 @ 10mA, 10V - Surface Mount 150°C (TJ) 350 mW SOT-23 NPN 500mV @ 1mA, 10mA 400 V
MMBT2907A-AU_R1_000A2
MMBT2907A-AU_R1_000A2
PANJIT
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 PNP 1.6V @ 50mA, 500mA 60 V
2SD734E
2SD734E
On Semiconductor
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MJD2955TF
MJD2955TF
On Semiconductor
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 10 A 20 @ 4A, 4V 2MHz Surface Mount 150°C (TJ) 1.75 W D-Pak PNP 8V @ 3.3A, 10A 60 V
2SD1005-T1-AY
2SD1005-T1-AY
Renesas
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MMBT3906FN3_R1_00001
MMBT3906FN3_R1_00001
PANJIT
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW 3-DFN (0.6x1) PNP 400mV @ 5mA, 50mA 40 V
BC847BFN3_R1_00001
BC847BFN3_R1_00001
Download Datasheet for BC847BFN3_R1_00001
PANJIT
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW 3-DFN (0.6x1) NPN 600mV @ 5mA, 100mA 45 V
MMBT5551-AU_R1_000A2
MMBT5551-AU_R1_000A2
PANJIT
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 600 mA 80 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23 NPN 200mV @ 5mA, 50mA 160 V
2SC3380ASTR-E
2SC3380ASTR-E
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Renesas
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 100 mA 30 @ 20mA, 20V 80MHz Surface Mount 150°C (TJ) 1 W UPAK NPN 1.5V @ 2mA, 20mA 300 V
MMBT5401-AU_R1_000A1
MMBT5401-AU_R1_000A1
Download Datasheet for MMBT5401-AU_R1_000A1
PANJIT
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 600 mA 60 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 PNP 500mV @ 5mA, 50mA 150 V
2SB1215T-TL-H
2SB1215T-TL-H
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On Semiconductor
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 3 A 200 @ 500mA, 5V 130MHz Surface Mount 150°C (TJ) 1 W TP-FA PNP 500mV @ 150mA, 1.5A 100 V
PBHV8110DA-AU_R1_000A1
PBHV8110DA-AU_R1_000A1
Download Datasheet for PBHV8110DA-AU_R1_000A1
PANJIT
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 1 A 140 @ 150mA, 2V 100MHz Surface Mount -55°C ~ 150°C (TJ) 1.25 W SOT-23 NPN 450mV @ 100mA, 1A 100 V
MMBT5401
MMBT5401
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Diotec Semiconductor
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 600 mA 60 @ 10mA, 1V 300MHz Surface Mount -65°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) PNP 500mV @ 5mA, 50mA 150 V
MMBT5551
MMBT5551
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Diotec Semiconductor
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 600 mA 80 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) NPN 200mV @ 5mA, 50mA 160 V
MMBTA06W_R1_00001
MMBTA06W_R1_00001
Download Datasheet for MMBTA06W_R1_00001
PANJIT
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-323 NPN 250mV @ 10mA, 100mA 80 V
MMBTA92
MMBTA92
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Diotec Semiconductor
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 500 mA 80 @ 10mA, 10V 50MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) PNP 500mV @ 2mA, 20mA 300 V
2SA1566JIETL-E
2SA1566JIETL-E
Renesas
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2SB560E-MP-AE
2SB560E-MP-AE
On Semiconductor
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2SA1725
2SA1725
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Sanken
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 6 A 50 @ 2A, 4V 20MHz Through Hole 150°C (TJ) 30 W TO-220F PNP 500mV @ 200mA, 2A 80 V
2SC4169
2SC4169
On Semiconductor
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TIP33CG
TIP33CG
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On Semiconductor
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 10 A 20 @ 3A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 80 W TO-247-3 NPN 4V @ 2.5A, 10A 100 V
50A02SP-AC
50A02SP-AC
On Semiconductor
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2SD1997-TD-E
2SD1997-TD-E
On Semiconductor
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2N2102 PBFREE
2N2102 PBFREE
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Central Semiconductor Corp
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 1 A 40 @ 150mA, 10V 60MHz Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 NPN - 65 V
2SC5200N(S1,E,S)
2SC5200N(S1,E,S)
Download Datasheet for 2SC5200N(S1,E,S)
Toshiba
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 15 A 80 @ 1A, 5V 30MHz Through Hole 150°C (TJ) 150 W TO-3P(N) NPN 3V @ 800mA, 8A 230 V
2N2270 PBFREE
2N2270 PBFREE
Download Datasheet for 2N2270 PBFREE
Central Semiconductor Corp
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 1 A 50 @ 150mA, 10V 100MHz Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 NPN 900mV @ 15mA, 150mA 45 V
2N2405 PBFREE
2N2405 PBFREE
Download Datasheet for 2N2405 PBFREE
Central Semiconductor Corp
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 1 A 60 @ 150mA, 10V 120MHz Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 NPN 500mV @ 15mA, 150mA 90 V
2SC4024
2SC4024
Download Datasheet for 2SC4024
Sanken
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 10 A 300 @ 1A, 4V 24MHz Through Hole 150°C (TJ) 35 W TO-220F NPN 500mV @ 100mA, 5A 50 V
2N4037 PBFREE
2N4037 PBFREE
Download Datasheet for 2N4037 PBFREE
Central Semiconductor Corp
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 1 A 50 @ 150mA, 10V 60MHz Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 PNP 1.4V @ 15mA, 150mA 40 V
2N2904A PBFREE
2N2904A PBFREE
Download Datasheet for 2N2904A PBFREE
Central Semiconductor Corp
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 600 mA 120 @ 150mA, 10V 200MHz Through Hole -65°C ~ 200°C (TJ) 600 mW TO-39 PNP 1.6V @ 50mA, 500mA 60 V
2SD2261-TD-E
2SD2261-TD-E
On Semiconductor
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2N3053 PBFREE
2N3053 PBFREE
Download Datasheet for 2N3053 PBFREE
Central Semiconductor Corp
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 700 mA 50 @ 150mA, 10V 100MHz Through Hole -65°C ~ 200°C (TJ) 5 W TO-39 NPN 1.4V @ 15mA, 150mA 40 V
CEN-U45 PBFREE
CEN-U45 PBFREE
Download Datasheet for CEN-U45 PBFREE
Central Semiconductor Corp
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 2 A 25000 @ 200mA, 5V 100MHz Through Hole -65°C ~ 150°C (TJ) 2 W TO-202 NPN - Darlington 1.5V @ 2mA, 1A 40 V
NJW44H11G
NJW44H11G
Download Datasheet for NJW44H11G
On Semiconductor
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 10 A 80 @ 4A, 2V 85MHz Through Hole -65°C ~ 150°C (TJ) 120 W TO-3P-3L NPN 1V @ 400mA, 8A 80 V
2SC5242-O(Q)
2SC5242-O(Q)
Download Datasheet for 2SC5242-O(Q)
Toshiba
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 15 A 80 @ 1A, 5V 30MHz Through Hole 150°C (TJ) 130 W TO-3P(N) NPN 3V @ 800mA, 8A 230 V
2SA1694
2SA1694
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Sanken
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 8 A 50 @ 3A, 4V 20MHz Through Hole 150°C (TJ) 80 W TO-3P PNP 1.5V @ 300mA, 3A 120 V
2SB1559
2SB1559
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Sanken
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 8 A 5000 @ 6A, 4V 65MHz Through Hole 150°C (TJ) 80 W TO-3P PNP - Darlington 2.5V @ 6mA, 6A 150 V
2N3716 PBFREE
2N3716 PBFREE
Download Datasheet for 2N3716 PBFREE
Central Semiconductor Corp
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 10 A 50 @ 1A, 2V 4MHz Through Hole -65°C ~ 200°C (TJ) 150 W TO-3 NPN 800mV @ 500mA, 5A 80 V
2SC3117S
2SC3117S
On Semiconductor
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2N2222AUA
2N2222AUA
TT Electronics/BI
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 800 mA 75 @ 1mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 500 mW Ceramic SMD NPN 1V @ 50mA, 500mA 50 V
BC846A-TP
BC846A-TP
Download Datasheet for BC846A-TP
Micro Commercial Co.
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 100 mA 110 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 NPN 500mV @ 5mA, 100mA 65 V
BC858B-TP
BC858B-TP
Download Datasheet for BC858B-TP
Micro Commercial Co.
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 100 mA 220 @ 2mA, 5V 200MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-23 PNP 650mV @ 5mA, 100mA 30 V
PBSS4480XZ
PBSS4480XZ
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Nexperia USA Inc.
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 4 A 250 @ 1A, 2V 120MHz Surface Mount 150°C (TJ) 550 mW SOT-89 NPN 270mV @ 500mA, 5A 80 V
2SAR372P5T100R
2SAR372P5T100R
ROHM Semiconductor
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 700 mA 120 @ 100mA, 5V 300MHz Surface Mount 150°C (TJ) 500 mW MPT3 PNP 360mV @ 50mA, 500mA 120 V
BD442G
BD442G
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On Semiconductor
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 4 A 40 @ 500mA, 1V 3MHz Through Hole -55°C ~ 150°C (TJ) 36 W TO-126 PNP 800mV @ 300mA, 3A 80 V
FJE3303H2TU
FJE3303H2TU
Download Datasheet for FJE3303H2TU
On Semiconductor
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 1.5 A 14 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 20 W TO-126-3 NPN 3V @ 500mA, 1.5A 400 V
BD180G
BD180G
Download Datasheet for BD180G
On Semiconductor
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 1 A 40 @ 150mA, 2V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-126 PNP 800mV @ 100mA, 1A 80 V
MJD112-1G
MJD112-1G
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On Semiconductor
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 2 A 1000 @ 2A, 3V 25MHz Through Hole -65°C ~ 150°C (TJ) 1.75 W I-PAK NPN - Darlington 3V @ 40mA, 4A 100 V
FJPF5021OTU
FJPF5021OTU
Download Datasheet for FJPF5021OTU
On Semiconductor
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 5 A 20 @ 600mA, 5V 15MHz Through Hole 150°C (TJ) 40 W TO-220F-3 NPN 1V @ 600mA, 3A 500 V
Showing 4751-4800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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