What are Transistors - Bipolar (BJT) - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency | Mounting Type | Operating Temperature | Power | Supplier Device Package | Transistor Type | Vce Saturation (Max) @ Ib, Ic | Voltage | |
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On Semiconductor
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On Semiconductor
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On Semiconductor
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1 A | 100 @ 150mA, 10V | 300MHz | Through Hole | - | 625 mW | TO-92-3 | NPN | 1V @ 50mA, 500mA | 40 V | |
On Semiconductor
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Infineon Technologies
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Renesas
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Harris Semiconductor
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Infineon Technologies
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200 mA | 100 @ 10mA, 1V | 300MHz | Surface Mount | 150°C (TJ) | 330 mW | PG-SC74-6 | NPN | 300mV @ 5mA, 50mA | 40 V | |
Harris Semiconductor
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On Semiconductor
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On Semiconductor
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8 A | 1000 @ 4A, 4V | - | Through Hole | 150°C (TJ) | 2 W | TO-220 | PNP - Darlington | 4V @ 30mA, 6A | 100 V | |
On Semiconductor
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Renesas
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On Semiconductor
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NXP Semiconductors
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Nexperia USA Inc.
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Infineon Technologies
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200 mA | 100 @ 10mA, 1V | 250MHz | Surface Mount | 150°C (TJ) | 330 mW | PG-SC74-6-1 | - | 400mV @ 5mA, 50mA | 40 V | |
NXP Semiconductors
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Renesas
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NXP Semiconductors
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On Semiconductor
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NXP Semiconductors
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Infineon Technologies
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300 mA | 20000 @ 100mA, 5V | 125MHz | Surface Mount | 150°C (TJ) | 330 mW | PG-SOT23 | NPN - Darlington | 1.5V @ 100µA, 100mA | 30 V | |
Renesas
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Infineon Technologies
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1 A | 2000 @ 500mA, 10V | 200MHz | Surface Mount | 150°C (TJ) | 1.5 W | PG-SOT223-4 | NPN - Darlington | 1.8V @ 1mA, 1A | 45 V | |
Renesas
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On Semiconductor
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On Semiconductor
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NXP Semiconductors
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Nexperia USA Inc.
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On Semiconductor
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Infineon Technologies
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600 mA | 100 @ 150mA, 10V | 200MHz | Surface Mount | 150°C (TJ) | 330 mW | PG-SOT23-3-3 | - | 1.6V @ 50mA, 500mA | 60 V | |
NXP Semiconductors
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NXP Semiconductors
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On Semiconductor
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Harris Semiconductor
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20 A | 25 @ 1A, 2V | - | Through Hole | -65°C ~ 150°C (TJ) | 200 W | TO-218 Isolated | NPN | 1.5V @ 2A, 20A | 200 V | |
On Semiconductor
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On Semiconductor
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Infineon Technologies
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NXP Semiconductors
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NXP Semiconductors
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On Semiconductor
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5 A | 15 @ 600mA, 5V | 18MHz | Through Hole | 150°C (TJ) | 50 W | TO-220-3 | NPN | 1V @ 600mA, 3A | 500 V | |
On Semiconductor
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1.5 A | 40 @ 500mA, 10V | 4MHz | Through Hole | 150°C (TJ) | 25 W | TO-220-3 | NPN | 1V @ 50mA, 500mA | 150 V | |
Infineon Technologies
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On Semiconductor
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4 A | 20 @ 2A, 1V | 40MHz | Through Hole | -55°C ~ 150°C (TJ) | 60 W | TO-220-3 | NPN | 500mV @ 50mA, 1A | 60 V | |
On Semiconductor
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8 A | 1000 @ 4A, 4V | - | Surface Mount | 150°C (TJ) | 1.75 W | D-Pak | PNP - Darlington | 4V @ 80mA, 8A | 100 V | |
On Semiconductor
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1 A | 30 @ 300mA, 10V | 10MHz | Surface Mount | 150°C (TJ) | 1.56 W | D-Pak | NPN | 1V @ 200mA, 1A | 400 V | |
Renesas
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Nexperia USA Inc.
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On Semiconductor
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