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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC856BQBZ
BC856BQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - PNP 650mV @ 5mA, 100mA 65 V
BC846AQBZ
BC846AQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - NPN 400mV @ 5mA, 100mA 65 V
BC846BQBZ
BC846BQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - NPN 400mV @ 5mA, 100mA 65 V
PMST2369,135
PMST2369,135
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Nexperia USA Inc.
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 - - - - - - - - 200 mA 40 @ 10mA, 1V - - - 500MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 250mV @ 1mA, 10mA 15 V
MMBTA14-TP
MMBTA14-TP
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Micro Commercial
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 - - - - - - - - 300 mA 20000 @ 150mA, 1V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
BC846BM,315
BC846BM,315
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - DFN1006B-3 - NPN 200mV @ 500µA, 10mA 65 V
BC847CW-TP
BC847CW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) - - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
BC846AHE3-TP
BC846AHE3-TP
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Micro Commercial
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - - 500mV @ 5mA, 100mA 65 V
MMSS8050HE3-H-TP
MMSS8050HE3-H-TP
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Micro Commercial
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 - - - - - - - - 1.5 A 200 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 500mV @ 80mA, 800mA 25 V
NTE2593
NTE2593
NTE Electronics
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 - - - - - - - - 10 mA 10 @ 500µA, 5V - - - 6MHz - - Through Hole 150°C (TJ) 2 W - - TO-220 - NPN 5V @ 200µA, 1mA 2100 V
2SB1198HE3-R-TP
2SB1198HE3-R-TP
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Micro Commercial
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 - - - - - - - - 500 mA 180 @ 100mA, 3V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 500mV @ 50mA, 500mA 80 V
BC847AW-TP
BC847AW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) - - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
TTC4116FU,LF
TTC4116FU,LF
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Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 150°C (TJ) 100 mW - - SC-70 - NPN 250mV @ 10mA, 100mA 50 V
PMBTA92,235
PMBTA92,235
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 500mV @ 2mA, 20mA 300 V
BC817-25QBZ
BC817-25QBZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 350 mW - - DFN1110D-3 - NPN 700mV @ 50mA, 500mA 45 V
2PB710ASL,235
2PB710ASL,235
Nexperia USA Inc.
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 140MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 600mV @ 30mA, 300mA 50 V
BC858BW-G
BC858BW-G
Comchip Technology
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 - - - - - - - - 100 mA 220 @ 2.2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 150 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 30 V
BC817K-40R
BC817K-40R
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 700mV @ 50mA, 500mA 45 V
SSTX304S
SSTX304S
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SMC Diode Solutions
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 - - - - - - - - 600 mA 100 @ 150mA, 10mV - - - - - - Surface Mount 150°C (TJ) 350 mW - - SOT-23-3 - PNP + Diode (Isolated) 1.6V @ 50mA, 500mA 60 V
2SA1774E3HZGTLQ
2SA1774E3HZGTLQ
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ROHM Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 150 mW - - EMT3 - NPN 500mV @ 50mA, 500mA 50 V
2SA1579T106S
2SA1579T106S
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ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 1mA, 10mA 120 V
BSS64AHZGT116
BSS64AHZGT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 30 @ 25mA, 1V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 300mV @ 10mA, 100mA 100 V
BCX56-16HE3-TP
BCX56-16HE3-TP
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Micro Commercial
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 130MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
2SAR502U3HZGT106
2SAR502U3HZGT106
ROHM Semiconductor
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 - - - - - - - - 500 mA 200 @ 100mA, 2V - - - 520MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 400mV @ 10mA, 200mA 30 V
PZT2907A-TP
PZT2907A-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223 - PNP 1.6V @ 50mA, 500mA 60 V
2SD2351T106W
2SD2351T106W
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ROHM Semiconductor
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 - - - - - - - - 150 mA 820 @ 1mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 5mA, 50mA 50 V
NSVMMBT2222AM3T5G
NSVMMBT2222AM3T5G
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On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 640 mW - - SOT-723 - NPN 1V @ 50mA, 500mA 40 V
2DA1774R-7-F
2DA1774R-7-F
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Diodes Incorporated
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 - - - - - - - - 150 mA 180 @ 1mA, 6V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 500mV @ 5mA, 50mA 50 V
PBSS8110Y,115
PBSS8110Y,115
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Nexperia USA Inc.
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 - - - - - - - - 1 A 150 @ 250mA, 10V - - - 100MHz - - Surface Mount 150°C (TJ) 625 mW - - 6-TSSOP - NPN 200mV @ 100mA, 1A 100 V
BC52PA,115
BC52PA,115
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - PNP 500mV @ 50mA, 500mA 60 V
PBSS5330X,135
PBSS5330X,135
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Nexperia USA Inc.
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 - - - - - - - - 3 A 175 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 320mV @ 300mA, 3A 30 V
BC53PA,115
BC53PA,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - PNP 500mV @ 50mA, 500mA 80 V
2SD1949T106R
2SD1949T106R
ROHM Semiconductor
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 - - - - - - - - 500 mA 180 @ 10mA, 3V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 400mV @ 15mA, 150mA 50 V
BCX56TF
BCX56TF
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 155MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
2SAR502E3HZGTL
2SAR502E3HZGTL
ROHM Semiconductor
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 - - - - - - - - 500 mA 200 @ 100mA, 2V - - - 520MHz - - Surface Mount 150°C (TJ) 150 mW - - EMT3 - PNP 400mV @ 10mA, 200mA 30 V
BDX54-S
BDX54-S
Bourns
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2V @ 12mA, 3A 45 V
PBHV8550XF
PBHV8550XF
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Nexperia USA Inc.
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 - - - - - - - - 150 mA 50 @ 50mA, 10V - - - 35MHz - - Surface Mount 150°C (TJ) 520 mW - - SOT-89 - NPN 90mV @ 6mA, 50mA 500 V
2SCRC41CT116S
2SCRC41CT116S
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-223-3 - NPN 500mV @ 1mA, 10mA 120 V
2SD1484KT146R
2SD1484KT146R
ROHM Semiconductor
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 - - - - - - - - 500 mA 180 @ 10mA, 3V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 15mA, 150mA 50 V
BFS19,215
BFS19,215
Download Datasheet for BFS19,215
Nexperia USA Inc.
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 - - - - - - - - 30 mA 65 @ 1mA, 10V - - - 260MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN - 20 V
UM2222AU3HZGT106
UM2222AU3HZGT106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - - 1V @ 50mA, 500mA 40 V
2SAR554PFRAT100
2SAR554PFRAT100
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 340MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 25mA, 500mA 80 V
BFS20,235
BFS20,235
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Nexperia USA Inc.
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 - - - - - - - - 25 mA 40 @ 7mA, 10V - - - 450MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN - 20 V
KSC5019MTA
KSC5019MTA
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On Semiconductor
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 - - - - - - - - 2 A 140 @ 500mA, 1V - - - 150MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - NPN 500mV @ 50mA, 2A 10 V
BCX17HZGT116
BCX17HZGT116
ROHM Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount 150°C (TJ) 200 mW - - SST3 - - 620mV @ 50mA, 500mA 45 V
PBSS5250THR
PBSS5250THR
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Nexperia USA Inc.
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 - - - - - - - - 2 A 130 @ 2A, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 700 mW - - TO-236AB - PNP 300mV @ 200mA, 2A 50 V
NSM80100MT1G
NSM80100MT1G
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On Semiconductor
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 - - - - - - - - 500 mA 120 @ 10mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 270 mW - - SC-74 - PNP 250mV @ 10mA, 100mA 80 V
BC847CHZGT116
BC847CHZGT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 400mV @ 5mA, 100mA 45 V
CMST5089 TR PBFREE
CMST5089 TR PBFREE
Download Datasheet for CMST5089 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 50 mA 400 @ 100µA, 5V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 275 mW - - SOT-323 - NPN 500mV @ 1mA, 10mA 25 V
DSS8110Y-7
DSS8110Y-7
Download Datasheet for DSS8110Y-7
Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 500mA, 10V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 625 mW - - SOT-363 - NPN 200mV @ 100mA, 1A 100 V
Showing 4851-4900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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