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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5088TFR
2N5088TFR
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 - - - - - - - - 100 mA 300 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 30 V
2N5089_J18Z
2N5089_J18Z
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 25 V
2N5089TAR
2N5089TAR
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2N5172
2N5172
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 - - - - - - - - 500 mA 100 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 1mA, 10mA 25 V
2N5172_D27Z
2N5172_D27Z
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90024-05TXV
90024-05TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
2N5172_D74Z
2N5172_D74Z
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2N5210_J05Z
2N5210_J05Z
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 1mA, 10mA 50 V
2N5306
2N5306
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 - - - - - - - - 1.2 A 7000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 25 V
2N5307
2N5307
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 - - - - - - - - 1.2 A 2000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D26Z
2N5308_D26Z
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 - - - - - - - - 1.2 A 7000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D74Z
2N5308_D74Z
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 - - - - - - - - 1.2 A 7000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D75Z
2N5308_D75Z
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 - - - - - - - - 1.2 A 7000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5366_D26Z
2N5366_D26Z
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 - - - - - - - - 500 mA 100 @ 50mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 30mA, 300mA 40 V
2N5400_D75Z
2N5400_D75Z
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 - - - - - - - - 600 mA 40 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 120 V
2N5401TAR
2N5401TAR
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2SC3600E
2SC3600E
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2N5551TAR
2N5551TAR
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N5961_D27Z
2N5961_D27Z
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 - - - - - - - - 100 mA 150 @ 10mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 500µA, 10mA 60 V
2N6427_D27Z
2N6427_D27Z
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 - - - - - - - - 1.2 A 14000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
2N6427_D75Z
2N6427_D75Z
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 - - - - - - - - 1.2 A 14000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
BC182_D74Z
BC182_D74Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182_ND74Z
BC182_ND74Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182L
BC182L
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182LB_D27Z
BC182LB_D27Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182LB_D74Z
BC182LB_D74Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182LB_D75Z
BC182LB_D75Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC183
BC183
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC184
BC184
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 - - - - - - - - 100 mA 130 @ 100mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC184_D27Z
BC184_D27Z
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 - - - - - - - - 100 mA 130 @ 100mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC212_D26Z
BC212_D26Z
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 - - - - - - - - 300 mA 60 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BC212L
BC212L
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 - - - - - - - - 300 mA 60 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BC212LB_D74Z
BC212LB_D74Z
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 - - - - - - - - 100 mA 60 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BC213L
BC213L
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 - - - - - - - - 500 mA 80 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC237BBU
BC237BBU
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237BTF
BC237BTF
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
90024-06TX
90024-06TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
BC238BBU
BC238BBU
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238BTA
BC238BTA
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC307BTFR
BC307BTFR
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 45 V
BC32716TAR
BC32716TAR
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC32716TFR
BC32716TFR
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC32725_J18Z
BC32725_J18Z
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC32725TAR
BC32725TAR
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
BC368_D74Z
BC368_D74Z
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 - - - - - - - - 2 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 100mA, 1A 20 V
BC369_D27Z
BC369_D27Z
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 - - - - - - - - 1.5 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 20 V
BC338TF
BC338TF
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC517_D27Z
BC517_D27Z
On Semiconductor
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
BC517_D75Z
BC517_D75Z
On Semiconductor
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
BC517_L34Z
BC517_L34Z
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
Showing 5351-5400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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