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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC556TFR
BC556TFR
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
BC557TAR
BC557TAR
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC557TFR
BC557TFR
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BC558TAR
BC558TAR
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BC558TFR
BC558TFR
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BCP54_L99Z
BCP54_L99Z
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-223-4 - NPN 500mV @ 50mA, 500mA 45 V
2SB1274R-SA
2SB1274R-SA
Sanyo Denki
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2N4410_D26Z
2N4410_D26Z
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 - - - - - - - - 200 mA 60 @ 10mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 100µA, 1mA 80 V
2N5401_D10Z
2N5401_D10Z
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401_D81Z
2N5401_D81Z
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5401_J05Z
2N5401_J05Z
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5550_D26Z
2N5550_D26Z
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 5mA, 50mA 140 V
2N5551_J18Z
2N5551_J18Z
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N5551_J61Z
2N5551_J61Z
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
BCW66G_D87Z
BCW66G_D87Z
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 - - - - - - - - 1 A 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
2N3390
2N3390
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 - - - - - - - - 500 mA 400 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
2N3390_D75Z
2N3390_D75Z
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 - - - - - - - - 500 mA 400 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
2N3393
2N3393
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 - - - - - - - - 500 mA 90 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
2N3704_D26Z
2N3704_D26Z
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 - - - - - - - - 500 mA 100 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 100mA 30 V
2N3704_D27Z
2N3704_D27Z
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 - - - - - - - - 500 mA 100 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 100mA 30 V
2N3704_D74Z
2N3704_D74Z
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 - - - - - - - - 500 mA 100 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 100mA 30 V
2N3704_D75Z
2N3704_D75Z
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 - - - - - - - - 500 mA 100 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 100mA 30 V
2N3906_J61Z
2N3906_J61Z
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 40 V
2N4126_S00Z
2N4126_S00Z
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 25 V
2N4403_D29Z
2N4403_D29Z
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4403_J05Z
2N4403_J05Z
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4403_J18Z
2N4403_J18Z
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4403_J60Z
2N4403_J60Z
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4403_S00Z
2N4403_S00Z
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N4953_D26Z
2N4953_D26Z
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 - - - - - - - - 1 A 200 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 15mA, 150mA 30 V
2N5087_J61Z
2N5087_J61Z
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 1mA, 10mA 50 V
2N5087_S00Z
2N5087_S00Z
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 1mA, 10mA 50 V
2N5306_D74Z
2N5306_D74Z
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 - - - - - - - - 1.2 A 7000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 25 V
2N5307_D74Z
2N5307_D74Z
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 - - - - - - - - 1.2 A 2000 @ 2mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5366_D27Z
2N5366_D27Z
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 - - - - - - - - 500 mA 100 @ 50mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 30mA, 300mA 40 V
2N5366_D75Z
2N5366_D75Z
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 - - - - - - - - 500 mA 100 @ 50mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 30mA, 300mA 40 V
2N5771_D26Z
2N5771_D26Z
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 - - - - - - - - 200 mA 50 @ 10mA, 300mV - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 50mA 15 V
2N5771_D27Z
2N5771_D27Z
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 - - - - - - - - 200 mA 50 @ 10mA, 300mV - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 50mA 15 V
IMIC22V01X6SA2
IMIC22V01X6SA2
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Infineon Technologies
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2N5771_D74Z
2N5771_D74Z
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 - - - - - - - - 200 mA 50 @ 10mA, 300mV - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 50mA 15 V
2N5771_D75Z
2N5771_D75Z
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 - - - - - - - - 200 mA 50 @ 10mA, 300mV - - - - - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - PNP 600mV @ 5mA, 50mA 15 V
2N6427_D26Z
2N6427_D26Z
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 - - - - - - - - 1.2 A 14000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
BC182B_D26Z
BC182B_D26Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182LA
BC182LA
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 - - - - - - - - 100 mA - - - - - - - Through Hole -55°C ~ 150°C (TJ) - - - TO-92-3 - NPN - 50 V
BC212L_D27Z
BC212L_D27Z
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 - - - - - - - - 300 mA 60 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BC212L_D75Z
BC212L_D75Z
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 - - - - - - - - 300 mA 60 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 50 V
BC214L_D26Z
BC214L_D26Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC214L_L34Z
BC214L_L34Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BCP56H,115
BCP56H,115
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Nexperia USA Inc.
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BC214LB
BC214LB
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
Showing 5451-5500 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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