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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SD1664T100P
2SD1664T100P
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ROHM Semiconductor
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 400mV @ 50mA, 500mA 32 V
2SC3779D
2SC3779D
Sanyo Denki
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2SC2873-Y(TE12L,ZC
2SC2873-Y(TE12L,ZC
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Toshiba
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - NPN 500mV @ 50mA, 1A 50 V
TIP29B
TIP29B
Harris Semiconductor
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220-3 - NPN 700mV @ 125mA, 1A 80 V
FJP3307DH2TU
FJP3307DH2TU
On Semiconductor
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 - - - - - - - - 8 A 26 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220-3 - NPN 3V @ 2A, 8A 400 V
KSC5302DTU
KSC5302DTU
On Semiconductor
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 - - - - - - - - 2 A 10 @ 1A, 1V - - - - - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 500mV @ 200mA, 1A 400 V
2SD1913S
2SD1913S
Sanyo Denki
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220ML - NPN 1V @ 200mA, 2A 60 V
FPN660A
FPN660A
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On Semiconductor
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 - - - - - - - - 3 A 250 @ 500mA, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 400mV @ 200mA, 2A 60 V
TIP32A
TIP32A
Harris Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.2V @ 375mA, 3A 60 V
MPSA20
MPSA20
NTE Electronics
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 - - - - - - - - 100 mA 40 @ 5mA, 10V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 1mA, 10mA 40 V
MPSA56
MPSA56
NTE Electronics
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 - - - - - - - - 500 mA 50 @ 10mA, 1V - - - 50MHz - - Through Hole -55°C ~ 175°C (TJ) 625 mW - - TO-92 - PNP 250mV @ 10mA, 100mA 80 V
2SA1370D-AE
2SA1370D-AE
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2SA1728-5-TB-E
2SA1728-5-TB-E
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2SB1126-TD-E
2SB1126-TD-E
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2SB698F
2SB698F
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2SB764E
2SB764E
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SBCP56T1
SBCP56T1
On Semiconductor
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 130MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.5 W - - SOT-223 (TO-261) - NPN 500mV @ 50mA, 500mA 80 V
UPA500T-T1-A
UPA500T-T1-A
Renesas
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BSP61E6327
BSP61E6327
Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223 - PNP - Darlington 1.8V @ 1mA, 1A 60 V
2SA1371E-AE
2SA1371E-AE
Sanyo Denki
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-MP - PNP 600mV @ 2mA, 20mA 300 V
2SC3332S-AA-SA
2SC3332S-AA-SA
Sanyo Denki
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 - - - - - - - - 700 mA 140 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 700 mW - - 3-NP - NPN 400mV @ 25mA, 250mA 160 V
PBSS5360PASX
PBSS5360PASX
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 5V - - - 120MHz - - Surface Mount 175°C (TJ) 600 mW - - DFN2020D-3 - PNP 450mV @ 300mA, 3A 60 V
2SB1132T100P
2SB1132T100P
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ROHM Semiconductor
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 500mV @ 50mA, 500mA 32 V
FMMT618QTA
FMMT618QTA
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Diodes Incorporated
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 - - - - - - - - 2.5 A 300 @ 200mA, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 625 mW - - SOT-23-3 - NPN 200mV @ 50mA, 2.5A 20 V
2SAR533PFRAT100
2SAR533PFRAT100
ROHM Semiconductor
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 - - - - - - - - 3 A 120 @ 50mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 50mA, 1A 50 V
2SCR544PFRAT100
2SCR544PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2.5 A 120 @ 100mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 300mV @ 50mA, 1A 80 V
FJP3835TU
FJP3835TU
On Semiconductor
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 - - - - - - - - 8 A 120 @ 3A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 500mV @ 300mA, 3A 120 V
ZTX614
ZTX614
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On Semiconductor
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 - - - - - - - - 800 mA 10000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - NPN - Darlington 1.25V @ 8mA, 800mA 100 V
KSA1242OTU
KSA1242OTU
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On Semiconductor
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 - - - - - - - - 5 A 100 @ 500mA, 2V - - - 180MHz - - Through Hole 150°C (TJ) 10 W - - I-PAK - PNP 1V @ 100mA, 4A 20 V
KSA1242YTU
KSA1242YTU
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On Semiconductor
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 - - - - - - - - 5 A 160 @ 500mA, 2V - - - 180MHz - - Through Hole 150°C (TJ) 10 W - - I-PAK - PNP 1V @ 100mA, 4A 20 V
FC12F-TL
FC12F-TL
Sanyo Denki
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MPSA12
MPSA12
NTE Electronics
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 - - - - - - - - 100nA (ICBO) 20000 @ 10mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN - Darlington 1V @ 10µA, 10mA 20 V
2N4402
2N4402
NTE Electronics
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 - - - - - - - - 600 mA 50 @ 150mA, 2V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 750mV @ 50mA, 500mA 40 V
PN3638A
PN3638A
NTE Electronics
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 - - - - - - - - 800 mA 20 @ 300mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 30mA, 300mA 25 V
2SA1346-AC
2SA1346-AC
On Semiconductor
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BFR505T115
BFR505T115
NXP Semiconductors
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2SA1524
2SA1524
On Semiconductor
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2SA1709S-AN
2SA1709S-AN
Sanyo Denki
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - PNP 600mV @ 100mA, 1A 100 V
2SA1682-4-TB-E
2SA1682-4-TB-E
On Semiconductor
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2SA2011-TD-E
2SA2011-TD-E
On Semiconductor
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2SB1119T-TD-E
2SB1119T-TD-E
On Semiconductor
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2SB1123T-TD-EX
2SB1123T-TD-EX
On Semiconductor
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2SD1207S-AE
2SD1207S-AE
Sanyo Denki
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-MP - NPN 400mV @ 50mA, 1A 50 V
BCP56-16/DG/B2115
BCP56-16/DG/B2115
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NXP Semiconductors
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GES6028TPE1
GES6028TPE1
Harris Semiconductor
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TE02196T
TE02196T
On Semiconductor
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2SC3361-6-TB-E
2SC3361-6-TB-E
Sanyo Denki
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BD442STU-ON
BD442STU-ON
On Semiconductor
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - 3MHz - - Through Hole 150°C (TJ) 36 W - - TO-126-3 - PNP 800mV @ 200mA, 2A 80 V
BC856A-QR
BC856A-QR
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 650mV @ 5mA, 100mA 65 V
PBSS5360PAS-QX
PBSS5360PAS-QX
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Nexperia USA Inc.
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 - - - - - - - - 3 A 150 @ 50mA, 5V - - - 120MHz - - Surface Mount 175°C (TJ) 600 mW - - DFN2020D-3 - PNP 450mV @ 300mA, 3A 60 V
Showing 5551-5600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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