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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N3415
2N3415
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 25 V
2N3417
2N3417
NTE Electronics
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2N3390
2N3390
NTE Electronics
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 - - - - - - - - 500 mA 400 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
MPSA44
MPSA44
NTE Electronics
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 - - - - - - - - 300 mA 50 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 750mV @ 5mA, 50mA 400 V
2N5210
2N5210
NTE Electronics
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BUX31
BUX31
Harris Semiconductor
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 - - - - - - - - 8 A 8 @ 4A, 3V - - - 15MHz - - Through Hole - 150 W - - TO-3 - NPN - 400 V
2SA1208T
2SA1208T
On Semiconductor
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AR1L2Q-T-AZ
AR1L2Q-T-AZ
Renesas
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2SA1435
2SA1435
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2SA1540D
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2SA1689E-HM-AA
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2SA1740E-TD-E
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2SA1729S-TD-E
On Semiconductor
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2SB1131T-AE
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2SB1131S
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PHPT610030NK115
PHPT610030NK115
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NXP Semiconductors
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PBSS4032NX/DG/B2115
PBSS4032NX/DG/B2115
NXP Semiconductors
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UPA804T-T1-A
UPA804T-T1-A
Renesas
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SJE3016
SJE3016
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SJD31CT4
SJD31CT4
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TE02561
TE02561
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2SA1338-6-TB-E
2SA1338-6-TB-E
On Semiconductor
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2SA1524-AC
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KSD1589YTU
KSD1589YTU
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 - - - - - - - - 5 A 5000 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-220F-3 - NPN - Darlington 1.5V @ 3mA, 3A 100 V
2SA2180
2SA2180
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 - - - - - - - - 5 A 200 @ 125mA, 2V - - - 130MHz - - Through Hole - 2 W - - TO-220ML - PNP 500mV @ 125mA, 2.5A 50 V
BD240A
BD240A
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On Semiconductor
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 - - - - - - - - 2 A 15 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - PNP 700mV @ 200mA, 1A 60 V
BD240A
BD240A
Harris Semiconductor
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 - - - - - - - - 2 A 40 @ 200mA, 4V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-220 - PNP 700mV @ 200mA, 1A 60 V
TIP116TU
TIP116TU
On Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP - Darlington 2.5V @ 8mA, 2A 80 V
BD809
BD809
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 - - - - - - - - 10 A 15 @ 4A, 2V - - - 1.5MHz - - Through Hole -55°C ~ 150°C (TJ) 90 W - - TO-220 - NPN 1.1V @ 300mA, 3A 80 V
2SC3955E
2SC3955E
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2SA1380E
2SA1380E
On Semiconductor
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2SB1131T
2SB1131T
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2SD1347T
2SD1347T
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PHPT60415NY115
PHPT60415NY115
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NXP Semiconductors
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TIP41G
TIP41G
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SOP8501-TL-E
SOP8501-TL-E
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2SA2180
2SA2180
Sanyo Denki
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 - - - - - - - - 5 A 200 @ 125mA, 2V - - - 130MHz - - Through Hole 150°C (TJ) 2 W - - TO-220ML - PNP 500mV @ 125mA, 2.5A 50 V
LB1233L-E
LB1233L-E
Sanyo Denki
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TIP125GE
TIP125GE
Harris Semiconductor
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LB1233L-E-ON
LB1233L-E-ON
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2SD1805G-TL-E-SY
2SD1805G-TL-E-SY
Sanyo Denki
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MJD31CHQ-13
MJD31CHQ-13
Diodes Incorporated
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 - - - - - - - - 3 A 120 @ 100mA, 3V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 1.45 W - - TO-252, (D-Pak) - NPN 400mV @ 500µA, 50mA 100 V
CPH3239-TL-E
CPH3239-TL-E
On Semiconductor
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 - - - - - - - - 5 A 250 @ 500mA, 2V - - - 330MHz - - Surface Mount - 900 mW - - 3-CPH - NPN 130mV @ 40mA, 2A 50 V
TN6718A
TN6718A
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On Semiconductor
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 - - - - - - - - 1.2 A 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 500mV @ 10mA, 250mA 100 V
KSE2955T
KSE2955T
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole 150°C (TJ) 600 mW - - TO-220-3 - PNP 8V @ 3.3A, 10A 60 V
2SA1700E-E
2SA1700E-E
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TN6714A
TN6714A
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 - - - - - - - - 2 A 50 @ 1A, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 500mV @ 100mA, 1A 30 V
TIP31ATU
TIP31ATU
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN 1.2V @ 375mA, 3A 60 V
FP210-TL-E
FP210-TL-E
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2SC3956E
2SC3956E
On Semiconductor
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Showing 5651-5700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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