ZXMN6A10N8TA MOSFET N-CH 60V 7.6A 8-SOIC
Mfr Part #:

ZXMN6A10N8TA

Mfr Name: Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 7.6A 8-SOIC
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ZXMN6A10N8TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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ZXMN6A10N8TA Description

Short technical summary and product information.
MOSFET N-CH 60V 7.6A 8-SOIC

ZXMN6A10N8TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ZXMN6A10N8TA Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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DMN6040SSS-13
DMN6040SSS-13
Diodes Incorporated
N-Channel MOSFET rated for 60V drain-source voltage and 5.5A continuous drain current. Packaged in an 8-SOIC surface mount package.
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AUIRF7478QTR
AUIRF7478QTR
Infineon Technologies
The AUIRF7478QTR is an N-Channel MOSFET from Infineon Technologies rated for 60V drain-source voltage and 7A continuous drain current. It comes in an 8-SOIC surface-mount package with typical on-resistance of 20mΩ.
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IRF7855PBF
IRF7855PBF
Infineon Technologies
The IRF7855PBF is an N-Channel power MOSFET from Infineon Technologies. It features a 60V drain-source breakdown voltage and 12A continuous drain current with a low 9.4 mΩ on-resistance.
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DMT6016LSS-13
DMT6016LSS-13
Diodes Incorporated
Diodes Incorporated DMT6016LSS-13 is a 60V N-Channel Enhancement Mode MOSFET with 9.2A continuous drain current and low on-resistance of 18mOhm at 10V. It is housed in an SO-8 surface mount package.
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