| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7855PBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high efficiency power conversion applications.
Key electrical specifications include a maximum drain-to-source voltage of 60V and a continuous drain current of 12A at 25°C ambient temperature. The device features a low static drain-to-source on-resistance of 9.4 mΩ maximum at VGS=10V. Gate threshold voltage ranges from 3.0V to 4.9V. The MOSFET is characterized for switching performance with typical turn-on delay of 8.7 ns and turn-off delay of 16 ns.
The device is housed in a standard 8-SOIC surface mount package with a junction-to-ambient thermal resistance of 50°C/W. It is suitable for isolated DC-DC converters, synchronous rectification, and non-isolated buck converter applications.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 12A at TA=25°C with VGS=10V, and 8.7A at TA=70°C.
The static drain-to-source on-resistance is 7.4 mΩ typical and 9.4 mΩ maximum at VGS=10V and ID=12A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface mount package (0.154 inch, 3.90mm width) with supplier device package 8-SO.
The part is listed as RoHS3 Compliant, though this is unverified.
The gate threshold voltage ranges from 3.0V minimum to 4.9V maximum at VDS=VGS and ID=100µA.