DMT6016LSS-13 Diodes Incorporated DMT6016LSS-13 is a 60V N-Channel Enhancement Mode MOSFET with 9.2A continuous drain current and low on-resistance of 18mOhm at 10V. It is housed in an SO-8 surface mount package.
Mfr Part #:

DMT6016LSS-13

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Diodes Incorporated DMT6016LSS-13 is a 60V N-Channel Enhancement Mode MOSFET with 9.2A continuous drain current and low on-resistance of 18mOhm at 10V. It is housed in an SO-8 surface mount package.
✓ Total Stock: 3,935 pcs
$ Price Range: $0.39 - $1.21

DMT6016LSS-13 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

DMT6016LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMT6016LSS-13 Description

Short technical summary and product information.

The DMT6016LSS-13 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance and maintain superior switching performance. It is ideal for high efficiency power management applications such as load switches, adaptor switches, and notebook PC power management. Key electrical specifications include a drain-source voltage of 60V, continuous drain current of 9.2A at 25°C (steady state, 10V gate drive), and maximum Rds(on) of 18mOhm at 10V gate voltage and 28mOhm at 4.5V. The device features low gate charge (17nC) and low input capacitance (864pF at 30V Vds), enabling fast switching. It is avalanche rated with 15.3A peak current and 11.7mJ energy. The MOSFET is housed in an SO-8 package (8-SOIC, 3.90mm width) and is surface mountable. Thermal characteristics include a junction-to-ambient thermal resistance of 85°C/W (steady state) and 45°C/W (t<10s), with a maximum power dissipation of 1.5W at 25°C. The device is fully RoHS3 compliant, lead-free, halogen-free, and MSL1 rated. It is supplied in tape and reel packaging with a standard quantity of 2500 pieces.

DMT6016LSS-13 Quick Information

Product Type: MOSFET
Canonical Name: Diodes Incorporated DMT6016LSS-13 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

DMT6016LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMT6016LSS-13 Estimated Pricing

Qty Low High
1+ $1.21 $1.21
10+ $0.75 $0.75
100+ $0.49 $0.49
500+ $0.39 $0.39
2,500+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT6016LSS-13 Features

  • Rated for 60V drain-source voltage.
  • Continuous drain current 9.2A at 25°C.
  • Low on-resistance of 18mOhm at 10V.
  • Fast switching with low gate charge 17nC.
  • RoHS compliant and halogen-free green device.

DMT6016LSS-13 Applications

  • Used in load switch circuits.
  • Ideal for adaptor switch applications.
  • Suitable for notebook PC power management.
  • High efficiency power management systems.

DMT6016LSS-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMT6016LSS-13?

The drain-source voltage (Vdss) is 60V.

What is the package type of this MOSFET?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also referred to as SO-8.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMT6016LSS-13 RoHS compliant?

Yes, it is RoHS3 compliant as verified by the datasheet. It is also totally lead-free and halogen-free.

What is the continuous drain current rating?

The continuous drain current is 9.2A at 25°C (steady state, VGS=10V) and derates to 7.4A at 70°C.

What is the on-resistance (Rds(on)) of this MOSFET?

The maximum Rds(on) is 18mOhm at VGS=10V and 28mOhm at VGS=4.5V.

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