| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | 1849+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AUIRF7478QTR is an N-channel power MOSFET from Infineon Technologies, built using HEXFET technology and qualified for automotive applications. It supports a maximum drain-source voltage of 60V and a continuous drain current of 7A at 25°C ambient, derating to 5.6A at 70°C. Pulsed drain current is rated up to 56A. The typical drain-source on-resistance is 20mΩ at Vgs=10V and Id=4.2A, with a maximum of 26mΩ. Gate threshold voltage is 3V maximum at Id=250µA, and the device supports drive voltages of 4.5V and 10V.
Electrical characteristics include a maximum power dissipation of 2.5W at 25°C ambient, single pulse avalanche energy of 140mJ, and avalanche current of 4.2A. The peak diode recovery dv/dt is rated at 3.7V/ns. Input capacitance is typically 1740pF and gate charge is typically 31nC. Operating junction and storage temperature range is -55°C to 150°C. Thermal resistance from junction to ambient is 50°C/W when mounted on a 1in² copper board, and junction-to-lead thermal resistance is 20°C/W.
The device is supplied in an 8-SOIC package (0.154" width, 3.90mm) with surface-mount mounting. It is lead-free and RoHS compliant. The part is automotive qualified according to Infineon's qualification standards.
The maximum drain-source voltage is 60V.
At 25°C ambient with Vgs=10V, the continuous drain current is 7.0A; at 70°C it is 5.6A.
The typical on-resistance is 20mΩ at Vgs=10V and Id=4.2A; maximum is 26mΩ.
The operating junction temperature range is -55°C to 150°C; storage temperature range is also -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm width) package with supplier package 8-SO, surface mount.
The datasheet states the device is lead-free and RoHS compliant.
Yes, it is automotive qualified according to Infineon's qualification standards.