DMN6040SSS-13 N-Channel MOSFET rated for 60V drain-source voltage and 5.5A continuous drain current. Packaged in an 8-SOIC surface mount package.
Mfr Part #:

DMN6040SSS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET rated for 60V drain-source voltage and 5.5A continuous drain current. Packaged in an 8-SOIC surface mount package.
✓ Total Stock: 88,520 pcs

DMN6040SSS-13 Available from 1 distributor

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✓ Non-Authorised
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88,520 pcs
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DMN6040SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN6040SSS-13 Description

Short technical summary and product information.

The DMN6040SSS-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.5A at 25°C. The device offers low on-resistance of 40 mOhm at VGS=10V and 55 mOhm at VGS=4.5V, enabling efficient switching.

 

Key electrical characteristics include a maximum gate threshold voltage of 3V, total gate charge of 22.4 nC at VGS=10V, and input capacitance of 1287 pF at VDS=25V. The MOSFET is capable of handling pulsed drain currents up to 30A and avalanche energy up to 10 mJ. The built-in body diode supports a continuous forward current of 2.5A.

 

The device is housed in an 8-SOIC (SO-8) surface mount package with a matte tin finish over a copper leadframe. The molded plastic case is halogen and antimony free, with UL 94V-0 flammability rating. Thermal performance is characterized by junction-to-ambient thermal resistance of 80°C/W (steady state) and 48°C/W (t < 10s) under standard PCB conditions.

 

The DMN6040SSS-13 is fully RoHS3 compliant, lead-free, and qualified to AEC-Q101 standards for automotive applications. It is supplied in tape and reel packaging with 2500 units per reel.

DMN6040SSS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN6040SSS-13 N-Channel MOSFET
Subcategory: N-Channel MOSFET

DMN6040SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMN6040SSS-13 Features

  • Low on-resistance of 40 mOhm typical.
  • Rated for 60V drain-source voltage.
  • Surface mount SO-8 package.
  • Qualified to AEC-Q101 standards.
  • Halogen and antimony free green device.

DMN6040SSS-13 Applications

  • Ideal for DC-DC converter applications.
  • Used in power management functions.
  • Suitable for backlighting circuits.
  • Designed for high efficiency switching.

DMN6040SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of DMN6040SSS-13?

60V.

What is the package type of DMN6040SSS-13?

8-SOIC (0.154", 3.90mm Width), also known as SO-8.

What is the operating temperature range of DMN6040SSS-13?

-55°C to 150°C (junction temperature).

Is DMN6040SSS-13 RoHS compliant?

Yes, it is RoHS3 compliant per EU Directive 2011/65/EU.

What is the on-resistance of DMN6040SSS-13?

40 mOhm maximum at VGS=10V, ID=4.5A, and 55 mOhm at VGS=4.5V.

What is the gate charge of DMN6040SSS-13?

22.4 nC maximum at VGS=10V.

Is DMN6040SSS-13 qualified for automotive use?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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