SI3422DV-T1-E3
Vishay
The SI3422DV-T1-E3 is a single N-channel MOSFET from Vishay Siliconix. It features Trench Technology with a 200V VDS rating and a 4A ID.
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27,585 pcs
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27585 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC8221-H is a Dual N+N channel MOSFET manufactured by VBsemi, supplied in a SOP8 package. This component features Trench Technology for enhanced performance.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a gate-source voltage (Vgs) of ±20V. The continuous drain current (Id) is rated at 6.8A for one channel and 6.0A for the other. The typical gate threshold voltage (Vth) is 1.7V. On-resistance (RDS) is specified at 26mΩ at VGS = 4.5V and 22mΩ at VGS = 10V.
This MOSFET is suitable for various electronic applications requiring efficient switching and power management. Its SOP8 package is common for surface-mount designs, facilitating integration into compact circuit boards.
The drain-source voltage (Vds) is 30V.
The gate-source voltage (Vgs) is ±20V.
The continuous drain current (Id) is 6.8A for one channel and 6.0A for the other.
The typical gate threshold voltage is 1.7V.
The drain-source on-resistance (RDS) at VGS = 4.5V is 26mΩ.
The drain-source on-resistance (RDS) at VGS = 10V is 22mΩ.
The TPC8221-H is supplied in a SOP8 package.