| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Technology |
The SI4174DY-T1-E3 is a Single N-Channel MOSFET manufactured by Vishay Dale, presented in a SOP8 package. This component features Trench Technology for enhanced performance.
Key electrical characteristics include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A. The gate-source voltage (Vgs) is rated at ±20V, with a typical gate threshold voltage (Vth) of 1.7V. The drain-source on-resistance (RDS(on)) is specified at 5mΩ at VGS = 4.5V and 4mΩ at VGS = 10V, indicating low conduction losses.
This MOSFET is suitable for various power management applications where efficient switching and low on-resistance are critical. Its SOP8 package allows for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
18A.
4mΩ at VGS=10V, 5mΩ at VGS=4.5V.
1.7V typical.
SOP8.
Trench.
N-Channel.