| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present | |
| Tape & Reel | |
| Technology |
The Si4946DY-T1-E3 from Vishay is a dual N-channel MOSFET designed for various electronic applications. This component utilizes Trench Technology, contributing to its efficient performance.
Key electrical specifications include a Drain-Source Voltage (VDS) of 60V and a Continuous Drain Current (ID) of 7A. The Gate-Source Voltage (VGS) is rated at ±20V, with a typical Gate Threshold Voltage (Vth) of 1.7V. The on-resistance (RDS(on)) is specified at 30mΩ at VGS = 4.5V and 28mΩ at VGS = 10V, indicating low conduction losses.
Packaged in a standard SOP8 surface-mount form factor, the Si4946DY-T1-E3 is suitable for applications requiring space efficiency. Its N+N channel polarity is characteristic of dual MOSFET configurations. This device is designed for general-purpose switching and power management tasks where reliable performance and specific voltage/current ratings are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOP8.
1.7V.
28mΩ.
7A.
Trench technology.