| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The FDS7779Z-NL is a P-Channel MOSFET manufactured by On Semiconductor, supplied in a SOP8 package. This component utilizes Trench Technology for enhanced performance.
Key electrical characteristics include a maximum drain-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±20V. The continuous drain current (ID) is rated at -13.5A. The typical gate threshold voltage (Vth) is -2.5V. On-state resistance (RDS(on)) is specified at 15mΩ at VGS = 4.5V and 11mΩ at VGS = 10V.
This MOSFET is suitable for various switching and amplification applications where a P-Channel device is required. Its SOP8 package is common for surface-mount designs, offering a balance of size and thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V.
-13.5A.
-2.5V.
11mΩ.
15mΩ.
±20V.
SOP8.