| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Technology |
The SI3422DV-T1-E3 is a single N-channel MOSFET manufactured by Vishay Siliconix. This component utilizes Trench Technology for enhanced performance.
Key electrical specifications include a Drain-Source Voltage (VDS) of 200V and a Gate-Source Voltage (VGS) of ±20V. The continuous Drain Current (ID) is rated at 4A. The typical threshold voltage (Vth) is 3V. On-resistance (RDS(on)) is specified at 200mΩ at 4.5V VGS and 160mΩ at 10V VGS.
Packaged in a SOT23-6 surface mount configuration, this MOSFET is suitable for various electronic applications requiring efficient switching and power management. Its robust design and specifications make it a reliable choice for circuit designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (VDS) is 200V.
The Gate-Source Voltage (VGS) is ±20V.
The continuous Drain Current (ID) is 4A.
The typical threshold voltage (Vth) is 3V.
The on-resistance (RDS(on)) at 4.5V VGS is 200mΩ.
The on-resistance (RDS(on)) at 10V VGS is 160mΩ.
The SI3422DV-T1-E3 is available in a SOT23-6 package.