| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,009 pcs
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30009 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The STS3C3F30L from VBsemi is a Dual N+P Channel MOSFET utilizing Trench technology, housed in a SOP8 package. This component is engineered for applications requiring high efficiency and low power consumption, such as power management and switching circuits.
Key electrical characteristics include a Drain-Source Voltage (VDS) of ±30V and a continuous Drain Current (ID) of ±8A. The MOSFET offers low On-Resistance (RDS(ON)), with values as low as 18mΩ for the N-channel and 40mΩ for the P-channel at VGS = 10V. The Threshold Voltage (Vth) is 1.6V for the N-channel and -1.7V for the P-channel.
This device is suitable for various applications including Battery Management Systems (BMS), DC-DC converters, load switching, and integrated power management ICs. Its dual-channel configuration and low conduction losses contribute to improved system reliability and energy efficiency, making it an ideal choice for battery-powered systems and intelligent devices.
30V.
8A.
18mΩ for the N-channel and 40mΩ for the P-channel.
1.6V for the N-channel and -1.7V for the P-channel.
SOP8 package.
Trench technology.