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TPC8007-H The VBsemi TPC8007-H is a Single N-Channel MOSFET designed for various electronic systems. It features Trench Technology and is housed in a SOP8 package.
Mfr Part #:

TPC8007-H

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The VBsemi TPC8007-H is a Single N-Channel MOSFET designed for various electronic systems. It features Trench Technology and is housed in a SOP8 package.
✓ Total Stock: 27,585 pcs

TPC8007-H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
27,585 pcs
On Request
27585 pcs On Request 1 On Request On Request 19+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8007-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC8007-H Description

Short technical summary and product information.

The TPC8007-H from VBsemi is a Single N-Channel MOSFET utilizing Trench Technology. It offers a Drain-Source Voltage (Vds) of 30V and a continuous Drain Current (Id) of 13A. The MOSFET has a low On-Resistance (Rds(on)) of 8mΩ at 10V gate drive.

 

This component is supplied in a standard SOP8 package, suitable for surface mount applications. Its electrical characteristics make it a versatile choice for power management and switching applications within industrial automation, smart home devices, and specialty vehicles.

 

Key electrical parameters include a Gate-Source Voltage (Vgs) of ±20V and a typical Gate Threshold Voltage (Vth) of 1.7V. The TPC8007-H is designed to meet the demands of modern electronic circuits requiring efficient and reliable MOSFET performance.

TPC8007-H Quick Information

Product Type: MOSFET
Series: TPC
Canonical Name: TPC8007-H Single N-Channel MOSFET
Subcategory: Single N-Channel

TPC8007-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TPC8007-H Features

  • Single N-Channel MOSFET
  • 30V Drain-Source Voltage
  • 13A Continuous Drain Current
  • 8mΩ On-Resistance at 10V
  • SOP8 Surface Mount Package

TPC8007-H Applications

  • Suitable for energy management
  • Used in industrial automation
  • Applicable to smart home devices
  • Designed for specialty vehicles
  • Powers commercial equipment

TPC8007-H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vds) for the TPC8007-H?

The Drain-Source Voltage (Vds) is 30V.

What is the continuous Drain Current (Id) for the TPC8007-H?

The continuous Drain Current (Id) is 13A.

What is the On-Resistance (Rds(on)) of the TPC8007-H at 10V?

The On-Resistance (Rds(on)) at 10V is 8mΩ.

What type of technology does the TPC8007-H MOSFET use?

The TPC8007-H MOSFET uses Trench Technology.

What package is the TPC8007-H MOSFET supplied in?

The TPC8007-H MOSFET is supplied in a SOP8 package.

TPC8007-H Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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STS3C3F30L
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VBsemi
The VBsemi STS3C3F30L is a Dual N+P Channel MOSFET designed for power management and switching circuits. It features a SOP8 package, ±30V VDS, and ±8A ID.
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