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74,620 pcs
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74620 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The STT3599C from VBsemi is a dual N+P channel MOSFET designed for various electronic applications. Packaged in a compact SOT-23-6, this device features a maximum drain-source voltage of ±20V and can handle continuous drain currents of up to 7A for the N-channel and 4.5A for the P-channel.
With a typical on-resistance of 30mΩ (N-channel) and 79mΩ (P-channel), the STT3599C offers efficient power switching. Its threshold voltages are approximately 0.71V for the N-channel and -0.81V for the P-channel. The Trench technology used in its fabrication contributes to its performance characteristics.
This MOSFET is suitable for applications such as power management modules, motor drivers, LED lighting, power inverters, and medical equipment where efficient and reliable power switching is required. Its dual-channel nature provides flexibility in circuit design.
The maximum drain-source voltage for the STT3599C is ±20V.
The STT3599C supports a maximum continuous drain current of 7A for the N-channel and 4.5A for the P-channel.
The typical on-resistance is 30mΩ for the N-channel at VGS=4.5V and 79mΩ for the P-channel at VGS=±20V.
The STT3599C is supplied in a SOT-23-6 package.
The STT3599C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STT3599C is Level 1.
The STT3599C is REACH Unaffected.