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28,985 pcs
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28985 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The VBsemi TN0201K-T1-GE3 is an N-Channel MOSFET designed for various current control and switching applications. It features a drain-source voltage rating of 20V and a continuous drain current capability of 6A.
This MOSFET exhibits low on-resistance values, with a typical resistance of 28mΩ at VGS = 4.5V and 42mΩ at VGS = 2.5V. The gate threshold voltage ranges from 0.5V to 1.5V. The device utilizes Trench technology and comes in a compact SOT-23 surface-mount package.
Its specifications make it suitable for applications such as power management, motor control, and switching power supplies. The N-Channel configuration is ideal for applications requiring efficient current conduction.
The maximum drain-source voltage is 20V.
6A.
Typical 28mOhm at Vgs=4.5V.
SOT-23 surface mount package.
0.5V to 1.5V.
Trench technology.