| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,308 pcs
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44308 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The TK80S06K3L from VBsemi is a Single N-Channel MOSFET designed for broad application use. This component is housed in a TO252 package and utilizes Trench Technology. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Ida) of 97A. The on-resistance (Rds(on)) is specified at a maximum of 4.5mΩ at 10V gate-source voltage and 12mΩ at 4.5V gate-source voltage. The typical gate threshold voltage (Vth) is 3V, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET is suitable for various applications requiring efficient power switching and management. Its robust specifications make it a versatile component for industrial automation, power electronics, and consumer electronics designs. The TO252 package is commonly used for surface-mount applications where space is a consideration.
Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 97A. The low on-resistance values at different gate voltages indicate good conduction efficiency. The Trench Technology employed in its construction contributes to its performance characteristics.
60V.
97A.
3V.
4.5mΩ maximum.
12mΩ maximum.
TO252 (DPAK) surface mount package.
±20V.