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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 09+/1009 | On Request | On Request |
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The Toshiba TPC8018-H is a Silicon N-Channel MOS Type Field Effect Transistor, part of the Ultra-High-Speed U-MOSIII series. It is engineered for high-speed and high-efficiency DC/DC converter applications, as well as notebook PC and portable equipment.
Key electrical characteristics include a drain-source voltage of 30V, a continuous drain current of 18A, and a typical ON-resistance of 3.5 mΩ. It also features a small gate charge of 12 nC (typ.) and a high forward transfer admittance of 50 S (typ.). The device operates within a channel temperature range of -55°C to 150°C.
Packaged in a small and thin SOP (Surface Mount) package, the TPC8018-H is suitable for space-constrained designs. Its small footprint and high-speed switching capabilities make it a versatile component for modern electronic devices.
The maximum drain-source voltage is 30 V.
The continuous drain current is 18 A (DC) and 72 A pulsed.
The typical drain-source on-resistance is 3.5 mΩ, with a maximum of 4.6 mΩ.
The device is offered in a surface-mount SOP package.
The maximum channel temperature is 150 °C.
The typical gate charge is 12 nC.
The typical input capacitance is 2.265 nF.
