| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,850 pcs
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8850 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Toshiba TK15D60U is an N-Channel Silicon Power MOSFET utilizing DTMOS II technology. It is engineered for high-performance switching regulator applications.
Key electrical characteristics include a drain-source breakdown voltage of 600V and a maximum drain current of 15A. The device features a low drain-source ON-resistance, typically 0.24 ohms at 7.5A, and a maximum of 0.3 ohms. Its gate threshold voltage ranges from 3.0V to 5.0V. The MOSFET exhibits a typical forward transfer admittance of 8.5 S.
Thermal performance is supported by a channel-to-case thermal resistance of 0.735 °C/W. The device operates within a channel temperature range of -55°C to 150°C. It is housed in a TO-220(W) package suitable for through-hole mounting.
This MOSFET is an electrostatic-sensitive device and requires careful handling. Its design focuses on efficiency and reliability in power conversion circuits.
The drain-source breakdown voltage is 600V minimum at ID = 10mA and VGS = 0V.
The continuous drain current is 15A.
The typical drain-source on-resistance is 0.24Ω at VGS = 10V and ID = 7.5A.
The TK15D60U is available in a TO-220(W) through-hole package.
The drain power dissipation is 170W at Tc = 25°C.
The gate threshold voltage is 3.0V to 5.0V at VDS = 10V and ID = 1mA.
The maximum channel temperature is 150°C.