TK15D60U The Toshiba TK15D60U is an N-Channel Power MOSFET designed for switching regulator applications. It offers a 600V breakdown voltage and a maximum ON-resistance of 0.3 ohms.
Mfr Part #:

TK15D60U

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK15D60U is an N-Channel Power MOSFET designed for switching regulator applications. It offers a 600V breakdown voltage and a maximum ON-resistance of 0.3 ohms.
✓ Total Stock: 8,850 pcs

TK15D60U Available from 1 distributor

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TK15D60U Specifications Quick View

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TK15D60U Description

Short technical summary and product information.

The Toshiba TK15D60U is an N-Channel Silicon Power MOSFET utilizing DTMOS II technology. It is engineered for high-performance switching regulator applications.

 

Key electrical characteristics include a drain-source breakdown voltage of 600V and a maximum drain current of 15A. The device features a low drain-source ON-resistance, typically 0.24 ohms at 7.5A, and a maximum of 0.3 ohms. Its gate threshold voltage ranges from 3.0V to 5.0V. The MOSFET exhibits a typical forward transfer admittance of 8.5 S.

 

Thermal performance is supported by a channel-to-case thermal resistance of 0.735 °C/W. The device operates within a channel temperature range of -55°C to 150°C. It is housed in a TO-220(W) package suitable for through-hole mounting.

 

This MOSFET is an electrostatic-sensitive device and requires careful handling. Its design focuses on efficiency and reliability in power conversion circuits.

TK15D60U Quick Information

Product Type: MOSFET
Series: TK
Canonical Name: TK15D60U N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

TK15D60U Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK15D60U Features

  • 600V drain-source breakdown voltage.
  • 15A continuous drain current.
  • Low 0.24Ω typical ON-resistance.
  • Suitable for switching regulators.
  • TO-220(W) package for through-hole mounting.

TK15D60U Applications

  • Used in switching regulator circuits.
  • Ideal for power conversion designs.
  • Suitable for high voltage applications.
  • General purpose power switching.

TK15D60U FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the TK15D60U?

The drain-source breakdown voltage is 600V minimum at ID = 10mA and VGS = 0V.

What is the maximum continuous drain current of the TK15D60U?

The continuous drain current is 15A.

What is the typical on-resistance of the TK15D60U?

The typical drain-source on-resistance is 0.24Ω at VGS = 10V and ID = 7.5A.

What is the package type of the TK15D60U?

The TK15D60U is available in a TO-220(W) through-hole package.

What is the maximum power dissipation of the TK15D60U?

The drain power dissipation is 170W at Tc = 25°C.

What is the gate threshold voltage range of the TK15D60U?

The gate threshold voltage is 3.0V to 5.0V at VDS = 10V and ID = 1mA.

What is the maximum channel temperature of the TK15D60U?

The maximum channel temperature is 150°C.

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