| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,500 pcs
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28500 pcs | On Request | 1 | On Request | On Request | 10+11+12+ | On Request | On Request |
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The Toshiba TK15A50D is a silicon N-Channel MOS Type Field Effect Transistor, utilizing π-MOSⅦ technology. It is specifically designed for switching regulator applications, offering excellent performance characteristics.
Key electrical specifications include a low drain-source ON-resistance of 0.24 Ω (typ.) and a high forward transfer admittance of 7.0 S (typ.). The device features a drain-source breakdown voltage of 500V and a gate threshold voltage ranging from 2.0V to 4.0V. It also exhibits a low leakage current of 10 μA (max) at 500V.
Switching performance is highlighted by fast switching times, with a typical rise time of 50 ns, turn-on time of 100 ns, fall time of 25 ns, and turn-off time of 140 ns. Capacitance values include Ciss at 2300 pF, Crss at 10 pF, and Coss at 250 pF, measured at 1 MHz.
Absolute maximum ratings are provided for safe operation, including a drain-source voltage of 500V, gate-source voltage of ±30V, and continuous drain current of 15A. The device is housed in an SC-67 package suitable for through-hole mounting and has a channel temperature limit of 150°C.
The drain-source breakdown voltage is 500 V.
The typical drain-source ON-resistance is 0.24 Ω at VGS = 10 V and ID = 7.5 A.
The continuous drain current is rated at 15 A.
The TK15A50D is supplied in an SC-67 package.
The typical turn-off time is 140 ns.