| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Storage Temperature |
The Toshiba TPC8021-H is a Silicon N Channel MOS Type Field Effect Transistor belonging to the U-MOSIII family. It is engineered for applications such as high-efficiency DC-DC converters, notebook PCs, and portable equipment.
Key electrical characteristics include a maximum drain-source voltage of 30V, a typical drain-source ON-resistance of 13.5 mΩ, and a typical gate charge of 3.6 nC. The device also offers a maximum power dissipation of 1.9W and a maximum channel temperature of 150°C.
This MOSFET is available in a small and thin package, contributing to a small footprint in designs. Its high-speed switching capability makes it suitable for demanding power management applications. The TPC8021-H is an electrostatic-sensitive device and requires careful handling.
Applications include notebook PC power supplies and portable electronic devices where efficient power conversion is critical. The small package size is advantageous for space-constrained designs.
30V.
2-6J1B.
The channel temperature can reach up to 150°C, with a storage temperature range of -55 to 150°C.
11A DC, 44A pulsed.
1.1V to 2.3V at VDS=10V, ID=1mA.
13.5mΩ typical.
1.9W (t=10s on glass-epoxy board).