| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,688 pcs
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6688 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TPCA8027-H is a silicon N-Channel MOS Type Field Effect Transistor, part of the Ultra-High-Speed U-MOS III series. It is engineered for applications such as switching regulators and motor drives, benefiting from its small footprint and high-speed switching capabilities.
Key electrical characteristics include a typical gate charge of 8.1 nC, a low typical drain-source ON-resistance of 8.0 mΩ, and a high typical forward transfer admittance of 44 S. The device also features a low leakage current of 10 μA (max) at 40 V drain-source voltage. The gate threshold voltage ranges from 2.0 to 4.0 V.
Absolute maximum ratings specify a drain-source voltage of 40 V and a continuous drain current of 30 A. The device can handle pulsed drain currents up to 90 A. Power dissipation is rated at 45 W at 25°C case temperature, with derated values for pulsed operation.
Packaged in a 2-5Q1A surface-mount package, the TPCA8027-H is suitable for compact designs. It operates within a channel temperature range of -55°C to 150°C.
The maximum drain-source voltage is 40 V.
The typical on-resistance is 8 mΩ.
It comes in a 2-5Q1A surface mount package.
The maximum channel temperature is 150 °C.
The gate threshold voltage range is 2.0 to 4.0 V.
The maximum DC drain current is 30 A; pulsed drain current is 90 A.
RoHS compliance data is unverified and not confirmed.