| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
516,571 pcs
|
516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
74,360 pcs
|
74360 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
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| Manufacturer Name | |
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| Storage Temperature |
The Toshiba TPC6113 is a Silicon P-Channel MOS Type (U-MOSⅥ) Field Effect Transistor. It is suitable for Lithium Ion Battery Applications and Power Management Switch Applications. The device features a small footprint due to its small and thin package.
Key electrical characteristics include a low drain-source ON-resistance of 38 mΩ (typ.) at VGS = -4.5V and a low leakage current of -10 μA (max) at VDS = -20 V. The enhancement mode transistor has a threshold voltage ranging from -0.5 to -1.2 V.
Absolute maximum ratings include a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -5 A. The device also has a drain power dissipation (PD) of 2.2 W (Note 2a) and 0.7 W (Note 2b).
The TPC6113 is available in a 6-pin 2-3T1A package and is designed for surface mounting with gull wing terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the TPC6113 is -20 V.
The typical drain-source ON-resistance (RDS(ON)) is 38 mΩ when the gate-source voltage (VGS) is -4.5V.
The maximum leakage current (IDSS) is -10 μA when the drain-source voltage (VDS) is -20 V.
The storage temperature range for the TPC6113 is -55 to 150 °C.
The TPC6113 is available in a 6-pin 2-3T1A package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.