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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 1644+ | On Request | On Request |
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The Toshiba TK100A08N1 is an N-channel MOSFET belonging to the U-MOSIII-H series. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a low drain-source on-resistance of 2.6 mΩ (typ.) at VGS = 10 V and a low leakage current of 10 µA (max) at VDS = 80 V. The enhancement mode MOSFET has a threshold voltage (Vth) ranging from 2.0 to 4.0 V.
Absolute maximum ratings specify a drain-source voltage (VDSS) of 80 V and a continuous drain current (ID) of 214 A. The device can handle pulsed drain current up to 100 A. Power dissipation is rated at 568 W at 25°C (Tc).
Packaged in a TO-220SIS, this MOSFET is suitable for through-hole mounting. The operating channel temperature can reach up to 150°C, with a storage temperature range of -55 to 150°C.
The maximum drain-source voltage is 80V.
The package type is TO-220SIS, a through-hole package.
The operating junction temperature range is -55 to 150°C.
The maximum continuous drain current is 214A (silicon limit) and 100A pulsed (1 ms).
The typical drain-source on-resistance is 2.6 mΩ at VGS = 10V.
The gate threshold voltage range is 2.0 to 4.0V at VDS = 10V, ID = 1.0 mA.
The maximum power dissipation is 568W at Tc = 25°C.