| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,300 pcs
|
78300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Storage Temperature |
The Infineon Technologies BSC061N08NS5 is an OptiMOSTM5 N-channel power transistor with a drain-source voltage rating of 80V. It is optimized for high-performance switched-mode power supplies (SMPS), such as synchronous rectification.
Key electrical characteristics include a maximum on-resistance of 6.1mΩ at 82A and a gate charge of 27nC. The device is 100% avalanche tested and features superior thermal resistance.
This MOSFET is supplied in the PG-TDSON-8 package, suitable for surface mounting. It is Pb-free and halogen-free, compliant with RoHS and IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The typical on-resistance is 6.1mΩ at 82A and 10V gate-source voltage.
The continuous drain current is 82A at 25°C and 52A at 100°C.
The BSC061N08NS5 is supplied in the PG-TDSON-8 package.
Yes, the BSC061N08NS5 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
The REACH status is Unaffected.