TPCA8023-H
Toshiba
The Toshiba TPCA8023-H is an N-channel MOSFET designed for high-efficiency DC/DC converters and portable equipment applications. It offers a low drain-source ON-resistance of 9.8 mΩ typical.
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904,000 pcs
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904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM3J355R is a P-Channel Silicon MOSFET designed for power management switch applications. It features a low drain-source on-resistance, with typical values of 36.0 mΩ at VGS = -1.8 V, 28.0 mΩ at VGS = -2.5 V, and 23.0 mΩ at VGS = -4.5 V. The device supports 1.8 V drive.
Absolute maximum ratings include a drain-source voltage of -20 V and a continuous drain current of -6 A. The channel temperature can reach up to 150 °C, with a storage temperature range of -55 to 150 °C. Power dissipation is rated at 1 W when mounted on a standard FR4 board.
The SSM3J355R comes in a SOT-23F package, suitable for surface mounting. The internal circuit consists of Gate, Source, and Drain terminals. This MOSFET is sensitive to electrostatic discharge and requires careful handling.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical drain-source on-resistance at VGS = -1.8 V is 36.0 mΩ.
The maximum drain-source voltage is -20 V.
The maximum continuous drain current is -6 A.
The SSM3J355R is available in a SOT-23F package.
The storage temperature range is -55 to 150 °C.
