Mfr Part #:

TPCC8070

Mfr Name: Toshiba

The Toshiba TPCC8070 is a Silicon N-channel MOS FET designed for applications like motor drivers and DC-DC converters. It features a low drain-source on-resistance and a small, thin package.

✓ Total Stock: 3,500 pcs

TPCC8070 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,500 pcs On Request	3500 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

TPCC8070 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	Surface Mount
Operating Temperature	175°C Max
Package / Case	TSON Advance
SVHC Present	Not Present
Storage Temperature	-55 to 150 °C

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TPCC8070 Description

Short technical summary and product information.

The Toshiba TPCC8070 is a Silicon N-channel MOS FET from the U-MOS series, manufactured by Toshiba. It is designed for applications such as motor drivers, DC-DC converters, and switching voltage regulators.

Key electrical characteristics include a drain-source voltage (VDSS) of 60V and a gate-source voltage (VGSS) of ±20V. The device exhibits a low drain-source on-resistance (RDS(ON)) of 10.8 mΩ (typ.) at VGS = 10V and a maximum leakage current (IDSS) of 10 µA at VDS = 60V. The enhancement mode MOSFET has a threshold voltage (Vth) ranging from 2.0 to 3.0V.

Absolute maximum ratings specify a continuous drain current (ID) of 30A and a pulsed drain current (IDP) of 90A. Power dissipation is rated at 46.8W (Tc = 25°C) and 2.27W (t = 10s). The device can handle a single-pulse avalanche energy (EAS) of 52.4 mJ with an avalanche current (IAR) of 30A.

The TPCC8070 comes in a small, thin TSON Advance package. It has a channel temperature rating of 175°C and a storage temperature range of -55 to 150°C. Thermal resistance from channel to case is 3.2 °C/W, and from channel to ambient is 66 °C/W (on glass-epoxy board a) or 178 °C/W (on glass-epoxy board b).

TPCC8070 Quick Information

Product Type: MOSFET

Series: U-MOS

Canonical Name: TPCC8070 Silicon N-channel MOS FET

Subcategory: N-Channel

TPCC8070 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPCC8070 Features

Low drain-source on-resistance: 10.8 mΩ typical.
60V drain-source voltage rating.
Small and thin TSON Advance package.
Suitable for motor drivers and DC-DC converters.
Enhancement mode N-channel MOSFET.

TPCC8070 Applications

Used in DC-DC converter circuits.
Suited for power management in portable devices.
Ideal for motor drive applications.
Applicable in battery protection systems.

TPCC8070 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the TPCC8070?

The maximum drain-source voltage is 60 V.

What is the continuous drain current rating?

The maximum continuous drain current is 30 A.

What is the typical drain-source on-resistance?

The typical on-resistance is 10.8 mΩ at VGS = 10 V.

What package does the TPCC8070 come in?

The TPCC8070 is available in a TSON Advance surface-mount package with 8 terminals.

What is the maximum operating temperature?

The maximum channel temperature is 175 °C.

What is the threshold voltage range?

The gate threshold voltage ranges from 2.0 V to 3.0 V at VDS = 10 V and ID = 1.0 mA.

Does this MOSFET have avalanche energy capability?

Yes, it is rated for a single-pulse avalanche energy of 52.4 mJ.