| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,076 pcs
|
7076 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba TPCA8023-H is a silicon N-channel MOS Field Effect Transistor utilizing U-MOSⅤ-H technology. It is designed for applications requiring high efficiency, such as DC/DC converters, notebook PCs, and portable equipment.
Key electrical characteristics include a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 21A. The device exhibits a low drain-source ON-resistance (RDS(ON)) of 9.8 mΩ typical and a small gate charge (Qg) of 5.0 nC typical, enabling high-speed switching.
The MOSFET is housed in a small and thin package, contributing to a small footprint in designs. Thermal characteristics include a channel-to-case thermal resistance of 4.17 °C/W typical. The operating temperature range is from -55°C to 150°C.
This device is suitable for applications demanding efficient power conversion and compact design. Its specifications make it a viable option for power management circuits in various electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
It is available in a surface mount 2-5Q1A package.
Maximum channel temperature is 150°C, and storage temperature range is -55 to 150°C.
The threshold voltage range is 1.5V to 2.5V at VDS=10V, ID=1mA.
Typical on-resistance is 9.8 mΩ.
Typical gate charge is 5.0 nC.
The single-pulse avalanche energy (EAS) is 57 mJ.