TPCA8023-H The Toshiba TPCA8023-H is an N-channel MOSFET designed for high-efficiency DC/DC converters and portable equipment applications. It offers a low drain-source ON-resistance of 9.8 mΩ typical.
Mfr Part #:

TPCA8023-H

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCA8023-H is an N-channel MOSFET designed for high-efficiency DC/DC converters and portable equipment applications. It offers a low drain-source ON-resistance of 9.8 mΩ typical.
Total Stock: 208,880 pcs
$ Price Range: $2.81

TPCA8023-H Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
7,076 pcs
7076 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
1,804 pcs
1804 pcs On Request 1 On Request On Request 11+ On Request On Request

TPCA8023-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
SVHC Present
Storage Temperature
Tape & Reel

TPCA8023-H Description

Short technical summary and product information.

The Toshiba TPCA8023-H is a silicon N-channel MOS Field Effect Transistor utilizing U-MOSⅤ-H technology. It is designed for applications requiring high efficiency, such as DC/DC converters, notebook PCs, and portable equipment.

 

Key electrical characteristics include a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 21A. The device exhibits a low drain-source ON-resistance (RDS(ON)) of 9.8 mΩ typical and a small gate charge (Qg) of 5.0 nC typical, enabling high-speed switching.

 

The MOSFET is housed in a small and thin package, contributing to a small footprint in designs. Thermal characteristics include a channel-to-case thermal resistance of 4.17 °C/W typical. The operating temperature range is from -55°C to 150°C.

 

This device is suitable for applications demanding efficient power conversion and compact design. Its specifications make it a viable option for power management circuits in various electronic devices.

TPCA8023-H Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TPCA8023-H N-Channel MOSFET
Subcategory: N-Channel

TPCA8023-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCA8023-H Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPCA8023-H Features

  • Low drain-source ON-resistance: 9.8 mΩ typical.
  • Small gate charge: 5.0 nC typical.
  • High forward transfer admittance: 47 S typical.
  • Suitable for DC/DC converters.
  • Small footprint package.

TPCA8023-H Applications

  • Ideal for DC/DC converter applications.
  • Used in notebook PC designs.
  • Suitable for portable equipment.
  • Enables high-speed switching.

TPCA8023-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDSS) of the TPCA8023-H?

The maximum drain-source voltage is 30V.

What package type is the TPCA8023-H available in?

It is available in a surface mount 2-5Q1A package.

What are the temperature ratings for the TPCA8023-H?

Maximum channel temperature is 150°C, and storage temperature range is -55 to 150°C.

What is the gate-source threshold voltage (Vth) range?

The threshold voltage range is 1.5V to 2.5V at VDS=10V, ID=1mA.

What is the typical on-resistance of the TPCA8023-H?

Typical on-resistance is 9.8 mΩ.

What is the typical gate charge (Qg) of the TPCA8023-H?

Typical gate charge is 5.0 nC.

What is the single-pulse avalanche energy rating?

The single-pulse avalanche energy (EAS) is 57 mJ.

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